NTTFS4C13N MOSFET Power, Single, N-Channel, 8FL 30 V, 38 A Features Low R to Minimize Conduction Losses DS(on) NTTFS4C13N 3. This is absolute maximum rating. Parts are tested at T = 25C V = 10 V, J qs I = 15 Apk, E = 11 mJ. L AS THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 5.8 JC JunctiontoAmbient Steady State (Note 4) R 60.8 JA C/W JunctiontoAmbient Steady State (Note 5) R 160 JA JunctiontoAmbient (t 10 s) (Note 4) R 33.5 JA 4. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 5. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V V = 0 V, I = TBD A, 34 (BR)DSSt GS D(aval) V (transient) T = 25C, t = 100 ns case transient DraintoSource Breakdown Voltage V / 14.9 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.1 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.8 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 7.5 9.4 DS(on) GS D m V = 4.5 V I = 12 A 11.2 14 GS D Forward Transconductance g V = 1.5 V, I = 15 A 40 S FS DS D Gate Resistance R T = 25C 1.0 G A CHARGES AND CAPACITANCES Input Capacitance C 770 ISS Output Capacitance C 443 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 127 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.165 RSS ISS GS DS Total Gate Charge Q 7.8 G(TOT) Threshold Gate Charge Q 1.4 G(TH) nC GatetoSource Charge Q 2.9 V = 4.5 V, V = 15 V I = 30 A GS GS DS D GatetoDrain Charge Q 3.7 GD Gate Plateau Voltage V 3.6 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 15.2 nC G(TOT) GS DS D Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulse Test: pulse width 300 s, duty cycle 2%. 7. Switching characteristics are independent of operating junction temperatures.