Supertex inc. DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description High input impedance These depletion-mode (normally-on) transistors utilize Low input capacitance an advanced vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This Fast switching speeds combination produces devices with the power handling Low on-resistance capabilities of bipolar transistors and with the high input Free from secondary breakdown impedance and positive temperature coefcient inherent in Low input and output leakage MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally- Applications induced secondary breakdown. Normally-on switches Solid state relays Supertexs vertical DMOS FETs are ideally suited to a Converters wide range of switching and amplifying applications where Linear ampliers high breakdown voltage, high input impedance, low input Constant current sources capacitance, and fast switching speeds are desired. Power supply circuits Telecom Ordering Information R I Package Options DS(ON) DSS BV /BV DSX DGX Device (max) (min) (V) TO-92 TO-243AA (SOT-89) () (mA) DN3545 DN3545N3-G DN3545N8-G 450 20 200 -G indicates package is RoHS compliant (Green) Pin Congurations DRAIN DRAIN SOURCE SOURCE DRAIN GATE Absolute Maximum Ratings GATE Parameter Value TO-92 (N3) TO-243AA (SOT-89) (N8) Drain-to-source voltage BV DSX Product Marking Drain-to-gate voltage BV DGX S i D N Gate-to-source voltage 20V YY = Year Sealed 3 5 4 5 O O WW = Week Sealed Operating and storage temperature -55 C to +150 C Y Y W W = Green Packaging O Soldering temperature* 300 C Package may or may not include the following marks: Si or Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation TO-92 (N3) of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. W = Code for week sealed D N 5 M W = Green Packaging * Distance of 1.6mm from case for 10 seconds. Package may or may not include the following marks: Si or TO-243AA (SOT-89) (N8) Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comDN3545 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C A O O ( C/W) ( C/W) (mA) (mA) (mA) (mA) (W) T0-92 136 1600 0.74 125 170 136 1600 TO-243AA 200 300 1.6 15 78 200 300 Notes: I (continuous) is limited by max rated T. D j Mounted on FR4 board, 25mm x 25mm x 1.57mm. O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 450 - - V V = -5.0V, I = 100A DSX GS D V Gate-to-source off voltage -1.5 - -3.5 V V = 25V, I = 10A GS(OFF) DS D O V Change in V with temperature - - -4.5 mV/ C V = 25V, I = 10A GS(OFF) GS(OFF) DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 1.0 A V = -5.0V, V = Max Rating GS DS I drain-to-source leakage current V = -5.0V, V = 0.8Max Rating D(OFF) GS DS - - 1.0 mA T = 125C A I Saturated drain-to-source current 200 - - mA V = 0V, V = 15V DSS GS DS R Static drain-to-source on-state resistance - - 20 V = 0V, I = 150mA DS(ON) GS D O R Change in R with temperature - - 1.1 %/ C V = 0V, I = 150mA DS(ON) DS(ON) GS D G Forward transductance 150 - - mmho I = 100mA, V = 10V FS D DS C Input capacitance - - 360 ISS V = -5.0V, V = 25V, GS DS C Common source output capacitance - - 40 pF OSS f = 1.0MHz C Reverse transfer capacitance - - 15 RSS t Turn-on delay time - - 20 d(ON) t Rise time - - 30 V = 25V, I = 150mA, r DD D ns t Turn-off delay time - - 30 R = 25,V = 0V to -10V d(OFF) GEN GS t Fall time - - 40 f V Diode forward voltage drop - - 1.8 V V = -5.0V, I = 150mA SD GS SD t Reverse recovery time - 800 - ns V = -5.0V, I = 150mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 0V 90% R L INPUT Pulse 10% Generator -10V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON ) r d(OFF) f VDD INPUT D.U.T. 10% 10% OUTPUT 0V 90% 90% Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2