X-On Electronics has gained recognition as a prominent supplier of DMTH8012LPS-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMTH8012LPS-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMTH8012LPS-13 Diodes Incorporated

DMTH8012LPS-13 electronic component of Diodes Incorporated
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Part No.DMTH8012LPS-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET N-Ch Enh Mode FET 80V 20Vgss 80A
Datasheet: DMTH8012LPS-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.33 ea
Line Total: USD 825 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.6018

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.342

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.33

   
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We are delighted to provide the DMTH8012LPS-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMTH8012LPS-13 and other electronic components in the MOSFETs category and beyond.

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Green DMTH8012LPS 80V 175C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features I Rated to +175C Ideal for High Ambient Temperature D BV R DSS DS(ON) T = +25C Environments C 17m V = 10V 72A High Conversion Efficiency GS 80V 21m V = 4.5V 62A Low RDS(ON) Minimizes On State Losses GS Low Input Capacitance Fast Switching Speed Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Qualified to AEC-Q101 Standards for High Reliability This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Mechanical Data ideal for high efficiency power management applications. Synchronous Rectifier Case: POWERDI 5060-8 Backlighting Case Material: Molded Plastic, Green Molding Compound. UL Power Management Functions Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) POWERDI 5060-8 S D Pin1 S D D S D G Top View Top View Internal Schematic Bottom View Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMTH8012LPS-13 2,500 / Tape & Reel POWERDI 5060-8 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH8012LPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 80 V DSS Gate-Source Voltage V 20 V GSS T = +25C 10 A Continuous Drain Current, V = 10V (Note 5) I A GS D 8.4 T = +70C A T = +25C 72 C A Continuous Drain Current, V = 10V (Note 6) I GS D 60 T = +70C C Maximum Continuous Body Diode Forward Current (Note 6) I 90 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 80 A DM Avalanche Current, L=0.1mH I 11.6 A AS Avalanche Energy, L=0.1mH E 10.2 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 2.6 W A D Thermal Resistance, Junction to Ambient (Note 5) 57 C/W R JA Total Power Dissipation (Note 6) 136 W T = +25C P C D Thermal Resistance, Junction to Case (Note 6) 1.1 C/W R JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 80 - - V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I - - 1 A V = 64V, V = 0V DSS DS GS Gate-Source Leakage I - - 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1 - 3 V V V = V , I = 250A GS(TH) DS GS D - 14 17 V = 10V, I = 12A GS D Static Drain-Source On-Resistance m R DS(ON) - 16.5 21 V = 4.5V, I = 6A GS D Diode Forward Voltage - 0.9 1.2 V V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance - 1949 - C iss V = 40V, V = 0V, DS GS Output Capacitance - 177 - pF Coss f = 1MHz Reverse Transfer Capacitance - 10 - C rss Gate Resistance R - 0.7 - V = 0V, V = 0V, f = 1MHz g DS GS - 15 - Total Gate Charge (V = 4.5V) Q GS g - 34 - Total Gate Charge (VGS = 10V) Qg nC VDS = 40V, ID = 12A Gate-Source Charge - 6 - Qgs Gate-Drain Charge Q - 4.5 - gd Turn-On Delay Time t - 4.9 - D(ON) Turn-On Rise Time t - 3.8 - R V = 40V, V = 10V, DD GS ns Turn-Off Delay Time t - 16.5 - I = 12A, R = 1.6 D(OFF) D G Turn-Off Fall Time t - 3.5 - F Body Diode Reverse Recovery Time t - 30.2 - ns RR I = 12A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 34.6 - nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. 2 of 7 DMTH8012LPS October 2015 Diodes Incorporated www.diodes.com Document number: DS37589 Rev.2 - 2 NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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