DN2625 N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options Features General Description Very Low Gate Threshold Voltage The DN2625 is a low-threshold Depletion-mode (normally-on) transistor that utilizes an advanced Designed to be Source-driven vertical DMOS structure and a well-proven silicon gate Low Switching Losses manufacturing process. This combination produces a Low Effective Output Capacitance device with the power handling capabilities of bipolar Designed for Inductive Loads transistors as well as the high input impedance and positive temperature coefficient inherent in Applications Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free Medical Ultrasound Beamforming from thermal runaway and thermally induced Ultrasonic Array-focusing Transmitter secondary breakdown. Piezoelectric Transducer Waveform Drivers Vertical DMOS Field-Effect Transistors (FETs) are ide- High-speed Arbitrary Waveform Generator ally suited to a wide range of switching and amplifying Normally-on Switches applications where high breakdown voltage, high input impedance, low input capacitance and fast switching Solid-state Relays speeds are desired. Constant Current Sources The DN2625DK6-G contains two MOSFETs in an Power Supply Circuits 8-lead, dual-pad DFN package. The DN2625 contains a single MOSFET in a TO-252 D-PAK package. Package Types TO-252 D-PAK 8-lead DFN (Dual Pad) (Top view) (Top view) DRAIN S1 1 8 D1 D1 G1 2 7 D1 S2 3 6 D2 D2 SOURCE G2 4 5 D2 GATE See Table 3-1 and Table 3-2 for pin information. 2017 Microchip Technology Inc. DS20005537B-page 1DN2625 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Drain-to-source Voltage ....................................................................................................................................... BV DSX Drain-to-gate Voltage .......................................................................................................................................... BV DGX Gate-to-source Voltage ......................................................................................................................................... 20V Operating Ambient Temperature, T ..................................................................................................... 55C to 150C A ....................................................................................................................... 55C to 150C Storage Temperature, T S Soldering Temperature (Note 1) ........................................................................................................................... 300C Notice: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Note 1: Distance of 1.6 mm from case for 10 seconds DC ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise noted, T = 25C. (Note 1) A Parameter Sym. Min. Typ. Max. Unit Conditions Drain-to-source Breakdown Voltage BV 250 V V = 2.5V, I = 50 A DSX GS D Drain-to-gate Breakdown Voltage BV 250 V V = 2.5V, I = 50 A DGX GS D Gate-to-source Off Voltage V 1.5 2.1 V V = 15V, I = 100 A GS(OFF) DS D Change in V V 4.5 mV/C V = 15V, I = 100 A (Note 2) GS(OFF) GS(OFF) DS D with Temperature Gate Body Leakage Current I 100 nA V = 20V, V = 0V GSS GS DS 1 V = 250V, V = 5V DS GS Drain-to-source Leakage Current I A D(OFF) 200 V = 250V, V = 5V, DS GS T = 125C (Note 2) A Saturated Drain-to-source Current I 1.1 A V = 0V, V = 15V DSS GS DS Pulsed Drain-to-source Current I 3.1 3.3 A V = 0.9V, V = 15V DS(PULSE) GS DS (With duty cycle of 1%) Static Drain-to-source On-resistance R 3.5 V = 0V, I = 1A DS(ON) GS D Change in R with DS(ON) 1.1 %/C V = 0V, I = 200 mA (Note 2) RDS(ON) GS D Temperature Note 1: Unless otherwise stated, all DC parameters are 100% tested at +25C. Pulse test: 300 s pulse, 2% duty cycle. 2: Specification is obtained by characterization and is not 100% tested. DS20005537B-page 2 2017 Microchip Technology Inc.