X-On Electronics has gained recognition as a prominent supplier of DN3135K1-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. DN3135K1-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DN3135K1-G Microchip

DN3135K1-G electronic component of Microchip
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See Product Specifications
Part No.DN3135K1-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 350V; 0.18A; 360mW; SOT23-3
Datasheet: DN3135K1-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.759 ea
Line Total: USD 0.76 
Availability - 30969
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
17460
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 500
Multiples : 500
500 : USD 0.6495
1000 : USD 0.6398
3000 : USD 0.6301
6000 : USD 0.6207
9000 : USD 0.6114
12000 : USD 0.6023
15000 : USD 0.5932

30969
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.759
25 : USD 0.638
100 : USD 0.583

285
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 1.26
5 : USD 1.204
16 : USD 1.106
43 : USD 1.05
100 : USD 1.008

285
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 69
Multiples : 1
69 : USD 1.081
100 : USD 1.0663

13580
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 500
Multiples : 500
500 : USD 0.7695
1000 : USD 0.7579
3000 : USD 0.7466
6000 : USD 0.7354
9000 : USD 0.7243

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DN3135K1-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DN3135K1-G and other electronic components in the MOSFETs category and beyond.

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The DN3135K1-G from Microchip is a N-Channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) with a unipolar design. It has a rated drain-source voltage of 350V, a max continuous drain current of 0.18A, and a maximum power dissipation of 360mW. The package type is SOT23-3.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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