X-On Electronics has gained recognition as a prominent supplier of DN3135K1-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. DN3135K1-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DN3135K1-G Microchip

DN3135K1-G electronic component of Microchip
DN3135K1-G Microchip
DN3135K1-G MOSFETs
DN3135K1-G  Semiconductors

Images are for reference only
See Product Specifications
Part No. DN3135K1-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 350V; 0.18A; 360mW; SOT23-3
Datasheet: DN3135K1-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
500: USD 0.6335 ea
Line Total: USD 316.75 
Availability - 10670
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ: 500  Multiples: 500
Pack Size: 500
Availability Price Quantity
10670
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 500
Multiples : 500
500 : USD 0.6335
1000 : USD 0.624
3000 : USD 0.5855
6000 : USD 0.5766
9000 : USD 0.568
12000 : USD 0.5595
15000 : USD 0.5511

29198
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 0.8342
25 : USD 0.6732
100 : USD 0.5639
3000 : USD 0.5639

270
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 1.26
5 : USD 1.204
16 : USD 1.176
25 : USD 1.106
100 : USD 1.064

270
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 66
Multiples : 1
66 : USD 1.3378

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Length
Transistor Type
Type
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Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
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Typical Turn-On Delay Time
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We are delighted to provide the DN3135K1-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DN3135K1-G and other electronic components in the MOSFETs category and beyond.

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The DN3135K1-G from Microchip is a N-Channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) with a unipolar design. It has a rated drain-source voltage of 350V, a max continuous drain current of 0.18A, and a maximum power dissipation of 360mW. The package type is SOT23-3.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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