X-On Electronics has gained recognition as a prominent supplier of DN3135K1-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. DN3135K1-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DN3135K1-G Microchip

Name: DN3135K1-G
Brand: Microchip
SKU: DN3135K1G_Microchip
Availability: InStock
Rating: 5 (11 reviews)

DN3135K1-G electronic component of Microchip

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See Product Specifications

Part No.	DN3135K1-G
Manufacturer:	Microchip
Category:	MOSFETs
Description:	Transistor: N-MOSFET; unipolar; 350V; 0.18A; 360mW; SOT23-3
Datasheet:	DN3135K1-G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

500: USD 0.655 ea
Line Total: USD 327.5

Availability - 7760
Ship by Fri. 02 May to Thu. 08 May

MOQ: 500 Multiples: 500
Pack Size: 500

DN3135K1-G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

7760

Ship by Fri. 02 May to Thu. 08 May

MOQ : 500
Multiples : 500

500 : USD 0.655
1000 : USD 0.6451
3000 : USD 0.6054
6000 : USD 0.5962
9000 : USD 0.5872
12000 : USD 0.5785
15000 : USD 0.5698

29177

Ship by Wed. 30 Apr to Fri. 02 May

MOQ : 1
Multiples : 1

1 : USD 0.8625
25 : USD 0.696
100 : USD 0.583
3000 : USD 0.583

270

Ship by Wed. 30 Apr to Fri. 02 May

MOQ : 1
Multiples : 1

1 : USD 1.26
5 : USD 1.204
25 : USD 1.106
100 : USD 1.078

Specifications

Manufacturer

Microchip Microchip

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

72 mA 72 mA

Vds - Drain-Source Breakdown Voltage

350 V 350 V

Rds On - Drain-Source Resistance

35 Ohms 35 Ohms

Transistor Polarity

N - Channel N - Channel

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

360 mW 360 mW

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SOT - 23 (TO - 236AB) SOT - 23 (TO - 236AB)

Packaging

Reel Reel

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

20 V 20 V

Channel Mode

Depletion Depletion

Configuration

Single Single

Brand

Microchip Microchip

Continuous Drain Current

72 mA 72 mA

Drain-Source Breakdown Voltage

350 V 350 V

Gate-Source Breakdown Voltage

+/- 20 V +/- 20 V

Power Dissipation

0.36 W 0.36 W

Rds On

35 Ohms 35 Ohms

Fall Time

15 ns 15 ns

Rise Time

15 ns 15 ns

Factory Pack Quantity :

3000 3000

Typical Turn-Off Delay Time

15 ns 15 ns

Height

0.95 mm 0.95 mm

Length

2.9 mm 2.9 mm

Transistor Type

1 N - Channel 1 N - Channel

Type

Fet Fet

Width

1.3 mm 1.3 mm

Forward Transconductance - Min

140 Ms 140 Ms

Cnhts

8541210000 8541210000

Hts Code

8541210095 8541210095

Mxhts

85412101 85412101

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8541210000 8541210000

Typical Turn-On Delay Time

10 ns 10 ns

Notes:- Show Stocked Products With Similar Attributes.

DN3135K1-G Alternative Parts

We are delighted to provide the DN3135K1-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DN3135K1-G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The DN3135K1-G from Microchip is a N-Channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) with a unipolar design. It has a rated drain-source voltage of 350V, a max continuous drain current of 0.18A, and a maximum power dissipation of 360mW. The package type is SOT23-3.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
7760 Ship by Fri. 02 May to Thu. 08 May MOQ : 500 Multiples : 500	500 : USD 0.655 1000 : USD 0.6451 3000 : USD 0.6054 6000 : USD 0.5962 9000 : USD 0.5872 12000 : USD 0.5785 15000 : USD 0.5698

29177 Ship by Wed. 30 Apr to Fri. 02 May MOQ : 1 Multiples : 1	1 : USD 0.8625 25 : USD 0.696 100 : USD 0.583 3000 : USD 0.583

270 Ship by Wed. 30 Apr to Fri. 02 May MOQ : 1 Multiples : 1	1 : USD 1.26 5 : USD 1.204 25 : USD 1.106 100 : USD 1.078

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