X-On Electronics has gained recognition as a prominent supplier of DN3765K4-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. DN3765K4-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DN3765K4-G Microchip

DN3765K4-G electronic component of Microchip
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Part No.DN3765K4-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 650V; 0.2A; 2.5W; TO252
Datasheet: DN3765K4-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.059 ea
Line Total: USD 3.06 
Availability - 902
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
902
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 3.059
10 : USD 3.0245
25 : USD 2.7485
100 : USD 2.6565
250 : USD 2.6335
500 : USD 2.622
4000 : USD 2.6105

1940
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 3.2331

5800
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3
Multiples : 1
3 : USD 3.8623
10 : USD 3.8415
25 : USD 3.8207
100 : USD 3.7999
250 : USD 3.7791
500 : USD 3.7583
1000 : USD 3.7375
3000 : USD 3.7167

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the DN3765K4-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DN3765K4-G and other electronic components in the MOSFETs category and beyond.

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Supertex inc. DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description High input impedance This depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertexs well- Low input capacitance proven silicon-gate manufacturing process. This combination Fast switching speeds produces a device with the power handling capabilities of Low on-resistance bipolar transistors and with the high input impedance and Free from secondary breakdown positive temperature coefficient inherent in MOS devices. Low input and output leakage Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary Applications breakdown. Normally-on switches Solid state relays Supertexs vertical DMOS FETs are ideally suited to a Converters wide range of switching and amplifying applications where Linear amplifiers high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Constant current sources Telecom Ordering Information Product Summary Part Number Package Option Packing BV /BV R (max) I (min) DSX DGX DS(ON) DSS DN3765K4-G TO-252 (D-PAK) 2000/Reel 650V 8.0 200mA -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Pin Configuration Absolute Maximum Ratings DRAIN Parameter Value Drain-to-source voltage BV DSX Drain-to-gate voltage BV DGX SOURCE Gate-to-source voltage 20V GATE O O Operating and storage temperature -55 C to +150 C O TO-252 (D-PAK) Maximum junction temperature 150 C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All Product Marking voltages are referenced to device ground. YY = Year Sealed Si YYWW WW = Week Sealed DN3765 Typical Thermal Resistance L = Lot Number LLLLLLL = Green Packaging Package ja O Package may or may not include the following marks: Si or TO-252 (D-PAK) 81 C/W TO-252 (D-PAK) Doc. DSFP-DN3765 Supertex inc. A070113 www.supertex.comDN3765 Thermal Characteristics I I Power Dissipation D D Package I I O DR DRM (continuous) (pulsed) T = 25 C A TO-252 (D-PAK) 300mA 500mA 2.5W 300mA 500mA Notes: O I (continuous) is limited by max rated T of 150 C. D j Mounted on FR4 board, 25mm x 25mm x 1.57mm. O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 650 - - V V = -5.0V, I = 100A DSX GS D V Gate-to-source off voltage -1.5 - -3.5 V V = 25V, I = 10A GS(OFF) DS D O V Change in V with temperature - - -4.5 mV/ C V = 25V, I = 10A GS(OFF) GS(OFF) DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 10 A V = -10V, V = Max Rating GS DS I Drain-to-source leakage current V = -10V, V = 0.8 Max Rating, D(OFF) GS DS - - 1.0 mA T = 125C A I Saturated drain-to-source current 200 - - mA V = 0V, V = 25V DSS GS DS R Static drain-to-source on-state resistance - - 8.0 V = 0V, I = 150mA DS(ON) GS D O R Change in R with temperature - - 1.1 %/ C V = 0V, I = 150mA DS(ON) DS(ON) GS D G Forward transductance 100 - - mmho I = 100mA, V = 10V FS D DS C Input capacitance - - 825 ISS V = -10V, GS C Common source output capacitance - - 190 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - - 110 RSS t Turn-on delay time - - 50 d(ON) V = 25V, DD t Rise time - - 75 r I = 150mA, ns D t Turn-off delay time - - 75 d(OFF) R = 25 GEN t Fall time - - 100 f V Diode forward voltage drop - - 1.8 V V = -5.0V, I = 200mA SD GS SD t Reverse recovery time - 800 - ns V = -5.0V, I = 200mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V VDD 90% INPUT Pulse R L 10% Generator -10V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) f VDD INPUT D.U.T. 10% 10% OUTPUT 90% 90% 0V Doc. DSFP-DN3765 Supertex inc. A070113 2 www.supertex.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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