NVD5484NL Power MOSFET 60 V, 17 m , 54 A, Single NChannel Logic Level, DPAK Features Low R to Minimize Conduction Losses DS(on) www.onsemi.com High Current Capability Avalanche Energy Specified V R I AECQ101 Qualified and PPAP Capable (BR)DSS DS(on) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 17 m 10 V 60 V 54 A Compliant 23 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J D Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS NChannel G Continuous Drain Cur- T = 25C I 54 A C D rent R (Notes 1 & 3) JC T = 100C 38 C Steady S State Power Dissipation R T = 25C P 100 W D JC C (Note 1) T = 100C 50 C Continuous Drain Cur- T = 25C I 10.7 A A D 4 rent R (Notes 1, 2 & JA T = 100C 7.6 3) A Steady State 2 1 Power Dissipation R T = 25C P 3.9 W JA A D 3 (Notes 1 & 2) T = 100C 2.0 A DPAK Pulsed Drain Current T = 25C, t = 10 s I 305 A A p DM CASE 369AA Current Limited by T = 25C I 60 A A Dmaxpkg STYLE 2 Package (Note 3) Operating Junction and Storage Temperature T , T 55 to C J stg +175 MARKING DIAGRAMS & PIN ASSIGNMENT Source Current (Body Diode) I 83 A S 4 Single Pulse DraintoSource Avalanche E 125 mJ AS Drain Energy (T = 25C, V = 50 V, V = 10 V, J DD GS I = 50 A, L = 0.1 mH, R = 25 ) L(pk) G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 2 Drain assumed, damage may occur and reliability may be affected. 1 3 Gate Source THERMAL RESISTANCE MAXIMUM RATINGS A = Assembly Location* Y = Year Parameter Symbol Value Unit WW = Work Week JunctiontoCase Steady State (Drain) R 1.5 C/W JC 5484NL = Device Code G = PbFree Package JunctiontoAmbient Steady State (Note 2) R 38 JA 1. The entire application environment impacts the thermal resistance values * The Assembly Location Code (A) is front side shown, they are not constants and are only valid for the particular conditions optional. In cases where the Assembly Location is noted. stamped in the package bottom (molding ejecter 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. pin), the front side assembly code may be blank. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: May, 2017 Rev. 2 NVD5484NL/D AYWW 54 84NLGNVD5484NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D Zero Gate Voltage Drain Current I A T = 25C 1.0 DSS J V = 0 V, GS V = 60 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.5 1.9 2.5 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 25 A 13.5 17 m DS(on) GS D V = 4.5 V, I = 25 A 18 23 GS D Forward Transconductance g V = 15 V, I = 20 A 41 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C V = 0 V, f = 1.0 MHz, 1410 pF iss GS V = 25 V DS Output Capacitance C 315 oss Reverse Transfer Capacitance C 135 rss Total Gate Charge Q nC V = 4.5 V 27 G(TOT) GS V = 48 V, DS I = 23 A D V = 10 V 48 GS Threshold Gate Charge Q 0.9 G(TH) V = 10 V, V = 48 V, GS DS GatetoSource Charge Q 4.4 GS I = 23 A D GatetoDrain Charge Q 19 GD Gate Resistance R 8.5 G SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 18 ns d(on) Rise Time t 160 r V = 4.5 V, V = 48 V, GS DS I = 23 A, R = 10 TurnOff Delay Time t D G 100 d(off) Fall Time t 110 f TurnOn Delay Time t 7.8 d(on) Rise Time t 45 r V = 10 V, V = 48 V, GS DS I = 23 A, R = 10 D G TurnOff Delay Time t 152 d(off) Fall Time t 113 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, V T = 25C 0.9 1.2 SD GS J I = 25 A S T = 125C 0.8 J ns Reverse Recovery Time t 64 RR Charge Time ta 33 V = 0 V, dIs/dt = 100 A/ s, GS I = 23 A Discharge Time tb S 31 Reverse Recovery Charge Q 118 nC RR 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2