Green DMTH6010LK3 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low R ensures on state losses are minimized DS(ON) I Max D Excellent Q R Product (FOM) BV R Max gd x DS (ON) DSS DS(ON) T = +25C C Advanced Technology for DC/DC Converters 8m V = 10V GS 70A 60V Small form factor thermally efficient package enables higher density 12m V = 4.5V GS 50A end products Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH6010LK3Q) This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, DS(ON) making it ideal for high efficiency power management applications. Mechanical Data Case: TO252 Power Management Functions Case Material: Molded Plastic, Green Molding Compound DC-DC Converters UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) TO252 Equivalent Circuit Top View Pin Out Top View Ordering Information (Note 4) Part Number Case Packaging DMTH6010LK3-13 TO252 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH6010LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage 20 V VGSS 14.8 T = +25C A Continuous Drain Current (Note 5) I A D 11.9 T = +70C A 70 T = +25C C Continuous Drain Current (Note 6) I A D 50 T = +100C C Maximum Continuous Body Diode Forward Current (Note 6) 60 A IS Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 130 A I DM Avalanche Current, L=0.1mH 20 A I AS Avalanche Energy, L=0.1mH 20 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 3.1 W D Thermal Resistance, Junction to Ambient (Note 5) R 47 C/W JA Total Power Dissipation (Note 6) P 60 W D Thermal Resistance, Junction to Case (Note 6) R 2.5 C/W JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1 3 V V V = V , I = 250A GS(TH) DS GS D 8 5.3 V = 10V, I = 20A GS D Static Drain-Source On-Resistance m R DS(ON) 12 8.3 V = 4.5V, I = 20A GS D Diode Forward Voltage 0.9 1.2 V V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 2090 C iss V = 30V, V = 0V, DS GS Output Capacitance 746 pF C oss f = 1MHz Reverse Transfer Capacitance 38.5 C rss Gate Resistance R 0.59 V = 0V, V = 0V, f = 1MHz g DS GS 19.3 Total Gate Charge (V = 4.5V) Q GS g 41.3 Total Gate Charge (V = 10V) Q GS g nC V = 30V, I = 20A DS D Gate-Source Charge Q 6 gs Gate-Drain Charge Q 8.8 gd Turn-On Delay Time 5.7 t D(ON) Turn-On Rise Time 4.3 t V = 30V, V =10V, R DD GS ns Turn-Off Delay Time 23.4 I = 20A, R = 3 t D G D(OFF) Turn-Off Fall Time 9.7 t F Body Diode Reverse Recovery Time 35.4 ns t RR I = 20A, di/dt = 100A/s F Body Diode Reverse Recovery Charge 38.2 nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DM TH6010LK3 November 2015 Diodes Incorporated www.diodes.com Document number: DS37355 Rev. 3 - 2 NEW PRODUCT