MOSFET Power, Single, N-Channel 60 V, 64 m , 17 A NVD5490NL Features www.onsemi.com Low R to Minimize Conduction Losses DS(on) High Current Capability V R I (BR)DSS DS(on) D Avalanche Energy Specified 64 m 10 V AECQ101 Qualified and PPAP Capable 60 V 17 A These Devices are PbFree, Halogen Free/BFR Free and are RoHS 85 m 4.5 V Compliant D (2,4) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit NChannel DraintoSource Voltage V 60 V DSS G (1) GatetoSource Voltage V 20 V GS S (3) Continuous Drain Cur- T = 25C I 17 A C D rent R (Notes 1 & 3) JC T = 100C 12 C Steady 4 State Power Dissipation R T = 25C P 49 W JC C D (Note 1) T = 100C 24 2 C 1 3 Continuous Drain Cur- T = 25C I 5.0 A A D rent R (Notes 1, 2 & JA DPAK T = 100C 3.0 3) A Steady CASE 369AA State STYLE 2 Power Dissipation R T = 25C P 3.4 W D JA A (Notes 1 & 2) T = 100C 1.7 A MARKING DIAGRAMS Pulsed Drain Current T = 25C, t = 10 s I 71 A DM A p & PIN ASSIGNMENT Current Limited by T = 25C I 30 A 4 A Dmaxpkg Package (Note 3) Drain Operating Junction and Storage Temperature T , T 55 to C J stg 175 Source Current (Body Diode) I 41 A S Single Pulse DraintoSource Avalanche E 41 mJ AS 2 Energy (T = 25C, V = 30 V, V = 10 V, J DD GS Drain 1 3 I = 9.0 A, L = 1.0 mH, R = 25 ) L(pk) G Gate Source Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) A = Assembly Location* Y = Year Stresses exceeding those listed in the Maximum Ratings table may damage the WW = Work Week device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 5490L = Device Code G = PbFree Package THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is C/W JunctiontoCase Steady State (Drain) R 3.1 JC stamped in the package, the front side assembly JunctiontoAmbient Steady State (Note 2) R 44 code may be blank. JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. ORDERING INFORMATION 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. See detailed ordering and shipping information in the package 3. Maximum current for pulses as long as 1 second is higher but is dependent dimensions section on page 5 of this data sheet. on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2020 Rev. 3 NVD5490NL/D AYWW 54 90NLGNVD5490NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 60 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 9 A 46 64 m DS(on) GS D V = 4.5 V, I = 9 A 66 85 GS D Forward Transconductance g V = 15 V, I = 20 A 15 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 365 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 91 oss V = 25 V DS Reverse Transfer Capacitance C 46 rss Total Gate Charge Q V = 4.5 V 7.8 nC G(TOT) GS V = 48 V, DS I = 9 A D V = 10 V 14 GS Threshold Gate Charge Q 0.4 nC G(TH) V = 48 V, I = 9 A DS D GatetoSource Charge Q 1.5 nC GS V = 10 V GS GatetoDrain Charge Q 5.4 nC GD Gate Resistance R 7 G SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 9.4 ns d(on) Rise Time t 57 r V = 48 V, V = 4.5 V, DS GS I = 9 A, R = 10 D G TurnOff Delay Time t 24 d(off) Fall Time t 35 f TurnOn Delay Time t 6.7 ns d(on) Rise Time t 17 r V = 48 V, V = 10 V, DS GS I = 9 A, R = 10 D G TurnOff Delay Time t 34 d(off) Fall Time t 34 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.97 1.2 V SD GS J I = 9 A S T = 125C 0.87 J Reverse Recovery Time t 25 ns rr Charge Time t 20 a I = 20.5 A , V = 0 V , S dc GS dc dI /dt = 100 A/ s S Discharge Time t 5.0 b Reverse Recovery Stored Charge Q 27 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2