X-On Electronics has gained recognition as a prominent supplier of NVD5490NLT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVD5490NLT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVD5490NLT4G ON Semiconductor

NVD5490NLT4G electronic component of ON Semiconductor
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Part No.NVD5490NLT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET DPAK 60V 17A 64MOHM
Datasheet: NVD5490NLT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.7199
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.6936
10 : USD 0.8081
100 : USD 0.4167
500 : USD 0.3548
1000 : USD 0.311
2500 : USD 0.2788
5000 : USD 0.2682
10000 : USD 0.2618
25000 : USD 0.2532
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Qualification
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NVD5490NLT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVD5490NLT4G and other electronic components in the MOSFETs category and beyond.

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MOSFET Power, Single, N-Channel 60 V, 64 m , 17 A NVD5490NL Features www.onsemi.com Low R to Minimize Conduction Losses DS(on) High Current Capability V R I (BR)DSS DS(on) D Avalanche Energy Specified 64 m 10 V AECQ101 Qualified and PPAP Capable 60 V 17 A These Devices are PbFree, Halogen Free/BFR Free and are RoHS 85 m 4.5 V Compliant D (2,4) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit NChannel DraintoSource Voltage V 60 V DSS G (1) GatetoSource Voltage V 20 V GS S (3) Continuous Drain Cur- T = 25C I 17 A C D rent R (Notes 1 & 3) JC T = 100C 12 C Steady 4 State Power Dissipation R T = 25C P 49 W JC C D (Note 1) T = 100C 24 2 C 1 3 Continuous Drain Cur- T = 25C I 5.0 A A D rent R (Notes 1, 2 & JA DPAK T = 100C 3.0 3) A Steady CASE 369AA State STYLE 2 Power Dissipation R T = 25C P 3.4 W D JA A (Notes 1 & 2) T = 100C 1.7 A MARKING DIAGRAMS Pulsed Drain Current T = 25C, t = 10 s I 71 A DM A p & PIN ASSIGNMENT Current Limited by T = 25C I 30 A 4 A Dmaxpkg Package (Note 3) Drain Operating Junction and Storage Temperature T , T 55 to C J stg 175 Source Current (Body Diode) I 41 A S Single Pulse DraintoSource Avalanche E 41 mJ AS 2 Energy (T = 25C, V = 30 V, V = 10 V, J DD GS Drain 1 3 I = 9.0 A, L = 1.0 mH, R = 25 ) L(pk) G Gate Source Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) A = Assembly Location* Y = Year Stresses exceeding those listed in the Maximum Ratings table may damage the WW = Work Week device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 5490L = Device Code G = PbFree Package THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is C/W JunctiontoCase Steady State (Drain) R 3.1 JC stamped in the package, the front side assembly JunctiontoAmbient Steady State (Note 2) R 44 code may be blank. JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. ORDERING INFORMATION 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. See detailed ordering and shipping information in the package 3. Maximum current for pulses as long as 1 second is higher but is dependent dimensions section on page 5 of this data sheet. on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2020 Rev. 3 NVD5490NL/D AYWW 54 90NLGNVD5490NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 60 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 9 A 46 64 m DS(on) GS D V = 4.5 V, I = 9 A 66 85 GS D Forward Transconductance g V = 15 V, I = 20 A 15 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 365 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 91 oss V = 25 V DS Reverse Transfer Capacitance C 46 rss Total Gate Charge Q V = 4.5 V 7.8 nC G(TOT) GS V = 48 V, DS I = 9 A D V = 10 V 14 GS Threshold Gate Charge Q 0.4 nC G(TH) V = 48 V, I = 9 A DS D GatetoSource Charge Q 1.5 nC GS V = 10 V GS GatetoDrain Charge Q 5.4 nC GD Gate Resistance R 7 G SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 9.4 ns d(on) Rise Time t 57 r V = 48 V, V = 4.5 V, DS GS I = 9 A, R = 10 D G TurnOff Delay Time t 24 d(off) Fall Time t 35 f TurnOn Delay Time t 6.7 ns d(on) Rise Time t 17 r V = 48 V, V = 10 V, DS GS I = 9 A, R = 10 D G TurnOff Delay Time t 34 d(off) Fall Time t 34 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.97 1.2 V SD GS J I = 9 A S T = 125C 0.87 J Reverse Recovery Time t 25 ns rr Charge Time t 20 a I = 20.5 A , V = 0 V , S dc GS dc dI /dt = 100 A/ s S Discharge Time t 5.0 b Reverse Recovery Stored Charge Q 27 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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