NVD5803N Power MOSFET 40 V, 85 A, Single NChannel, DPAK Features Low R DS(on) High Current Capability www.onsemi.com Avalanche Energy Specified AECQ101 Qualified These Devices are PbFree, Halogen Free/BFR Free and are RoHS V R MAX I MAX (BR)DSS DS(on) D Compliant 40 V 5.7 m 10 V 85 A Applications DC Motor Drive D Reverse Battery Protection Glow Plug G MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit S DraintoSource Voltage V 40 V DSS NCHANNEL MOSFET GatetoSource Voltage Continuous V 20 V GS 4 Continuous Drain T = 25C I 85 A C D Current (R ) JC Steady T = 100C 61 (Note 1) C 2 1 State 3 Power Dissipation T = 25C P 83 W C D (R ) (Note 1) JC DPAK CASE 369AA Pulsed Drain Current t = 10 s I 228 A p DM (Surface Mount) Operating Junction and Storage Temperature T , T 55 to C J stg STYLE 2 175 Source Current (Body Diode) I 85 A S MARKING DIAGRAM Single Pulse DraintoSource Avalanche E 240 mJ & PIN ASSIGNMENT AS Energy (V = 50 V, V = 10 V, R = 25 , DD GS G 4 I = 40 A, L = 0.3 mH) L(pk) Drain Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 Drain 1 3 THERMAL RESISTANCE MAXIMUM RATINGS Gate Source Parameter Symbol Value Unit A = Assembly Location* C/W JunctiontoCase (Drain) R 1.8 JC Y = Year WW = Work Week JunctiontoAmbient Steady State (Note 1) R 42 JA 5803N = Device Code 1. Surfacemounted on FR4 board using 1 in sq pad size G = PbFree Package (Cu area = 1.127 in sq 1 oz including traces. * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2016 Rev. 2 NVD5803N/D AYWW V58 03NGNVD5803N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 40 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 40 V DS T = 150C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 1.5 3.5 V GS(TH) GS DS D Negative Threshold Temperature Co- V /T 7.4 mV/C GS(TH) J efficient DraintoSource On Resistance R V = 10 V, I = 50 A 4.9 5.7 m DS(on) GS D V = 5.0 V, I = 30 A 6.7 GS D Forward Transconductance g V = 15 V, I = 15 A 13.6 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCES pF Input Capacitance C 3220 iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 390 oss V = 25 V DS Reverse Transfer Capacitance C 270 rss Total Gate Charge Q 51 nC G(TOT) Threshold Gate Charge Q 3.8 G(TH) V = 10 V, V = 20 V, GS DS I = 50 A D GatetoSource Charge Q 12.7 GS GatetoDrain Charge Q 12.7 GD SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 12.6 ns d(on) Rise Time t 21.4 r V = 10 V, V = 32 V, GS DD I = 50 A, R = 2.0 D G TurnOff Delay Time t 28.3 d(off) Fall Time t 6.6 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.88 1.2 V SD J V = 0 V, GS I = 30 A S T = 150C 0.73 J Reverse Recovery Time t 27.2 ns RR Charge Time ta 14 V = 0 V, dIs/dt = 100 A/ s, GS I = 30 A S Discharge Time tb 13.2 Reverse Recovery Charge Q 17 nC RR 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Order Number Package Shipping NVD5803NT4G DPAK 2500 / Tape & Reel (PbFree) SVD5803NT4G DPAK 2500 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2