NVD5890NL Power MOSFET 40 V, 3.7 m , 123 A, Single NChannel DPAK Features Low R to Minimize Conduction Losses DS(on) NVD5890NL THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction toCase (Drain) R 1.4 C/W JC JunctiontoAmbient Steady State (Note 2) R 37 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 40 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 40 V DS T = 150C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V 1.5 2.5 V V = V , I = 250 A GS(TH) GS DS D Negative Threshold Temperature V /T 7.4 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V, I = 50 A 2.9 3.7 m DS(on) GS D V = 4.5 V, I = 50 A 4.4 5.5 GS D Forward Transconductance gFS V = 15 V, I = 15 A 16.3 S DS D CHARGES AND CAPACITANCES Input Capacitance C 4760 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 580 oss V = 25 V DS Reverse Transfer Capacitance C 385 rss Total Gate Charge Q V = 10 V, V = 15 V, 84 nC G(TOT) GS DS I = 50 A D Total Gate Charge Q 42 nC G(TOT) Threshold Gate Charge Q 4.2 G(TH) V = 4.5 V, V = 15 V, GS DS I = 50 A D GatetoSource Charge Q 13.7 GS GatetoDrain Charge Q 18.8 GD SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 12 ns d(on) Rise Time t 35 r V = 10 V, V = 20 V, GS DS I = 50 A, R = 2.0 D G Turn Off Delay Time t 38 d(off) Fall Time t 11 f 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures.