DATA SHEET www.onsemi.com MOSFET Power, Single, V R MAX I MAX (BR)DSS DS(ON) D P-Channel, TSOP-6 111 m 10 V -60 V, -2.9 A 60 V 2.9 A 142 m 4.5 V NTGS5120P, NVGS5120P PChannel Features 12 56 60 V BVds, Low R in TSOP6 Package DS(on) 4.5 V Gate Rating NVGS Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS 4 Compliant MARKING Applications DIAGRAM High Side Load Switch Power Switch for Printers, Communication Equipment TSOP6 XX M CASE 318G MAXIMUM RATINGS (T = 25C unless otherwise stated) J STYLE 1 1 1 Parameter Symbol Value Unit XX = Device Code DraintoSource Voltage V 60 V DSS M = Date Code GatetoSource Voltage V 20 V GS = PbFree Package (Note: Microdot may be in either location) Continuous Drain T = 25C I 2.5 A D Steady Current (Note 1) State T = 85C 2.0 A A PIN ASSIGNMENT Drain DrainSource t 5 s T = 25C 2.9 A 6 5 4 Power Dissipation Steady P 1.1 D (Note 1) State T = 25C W A t 5 s 1.4 Continuous Drain T = 25C I 1.8 A D Current (Note 2) A 1 2 3 T = 85C 1.3 Steady A Drain Drain Gate State Power Dissipation P 0.6 W D T = 25C A (Note 2) ORDERING INFORMATION Pulsed Drain Current t = 10 s I 20 A See detailed ordering and shipping information ion page 5 of DM p this data sheet. Operating Junction and Storage Temperature T , 55 to C J T 150 STG Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces) 2. Surfacemounted on FR4 board using the minimum recommended pad size. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: September, 2021 Rev. 2 NTGS5120P/DNTGS5120P, NVGS5120P THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoAmbient Steady State (Note 3) R 102 JA JunctiontoAmbient t = 5 s (Note 3) R 77.6 C/W JA JunctiontoAmbient Steady State (Note 4) R 200 JA 3. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces) 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 48 V DS T = 125C 5.0 J GatetoSource Leakage Current I V = 0 V, V = 12 V 100 nA GSS DS GS V = 0 V, V = 20 V 200 nA DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.0 3.0 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 2.9 A 72 111 m DS(on) GS D V = 4.5 V, I = 2.5 A 88 142 GS D Forward Transconductance g V = 5.0 V, I = 6.0 A 10.1 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE pF Input Capacitance C 942 ISS Output Capacitance C 72 V = 0 V, f = 1 MHz, V = 30 V OSS GS DS Reverse Transfer Capacitance C 48 RSS Total Gate Charge Q 18.1 nC G(TOT) Threshold Gate Charge Q 1.2 G(TH) V = 10 V, V = 30 V GS DS I = 2.9 A D GatetoSource Charge Q 2.7 GS GatetoDrain Charge Q 3.6 GD SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 8.7 ns d(ON) Rise Time t 4.9 r V = 10 V, V = 30 V, GS DS I = 1.0 A, R = 6.0 D G TurnOff Delay Time t 38 d(OFF) Fall Time t 12.8 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.75 1.0 V SD GS J I = 0.9 A S Reverse Recovery Time t 18.3 ns RR V = 0 V, d /d = 100 A/ s, GS IS t Charge Time t 15.5 ns a I = 0.9 A S Reverse Recovery Charge Q 15.1 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width 300 s, duty cycle 2% 6. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2