NVMFD5483NL MOSFET Power, Dual N-Channel 60 V, 36 m , 24 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Designs Low R to Minimize Conduction Losses DS(on) V R MAX I MAX (BR)DSS DS(on) D Low Capacitance to Minimize Driver Losses 36 m 10 V 175C Operating Temperature 60 V 24 A NVMFD5483NLWF Wettable Flank Option for Enhanced Optical 45 m 4.5 V Inspection AECQ101 Qualified and PPAP Capable Dual NChannel This is a PbFree Device D1 D2 MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit G1 G2 DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS S1 S2 Continuous Drain T = 25C I 24 A C D Current R JC (Notes 1, 2, 4) T = 100C 17 C Steady MARKING DIAGRAM State Power Dissipation T = 25C P 44.1 W D C D1 D1 R (Notes 1, 2) JC 1 T = 100C 22.1 S1 D1 C DFN8 5x6 G1 D1 XXXXXX Continuous Drain T = 25C I 6.4 A A D (SO8FL) S2 D2 AYWZZ Current R JA CASE 506BT T = 100C 4.5 (Notes 1, 3 & 4) G2 D2 A Steady State D2 D2 Power Dissipation T = 25C P 3.1 W A D R (Notes 1 & 3) JA XXXXXX = 5483NL T = 100C 1.5 A XXXXXX = (NVMFD5483NL) or Pulsed Drain Current T = 25C, t = 10 s I 153 A XXXXXX = 5483LW A p DM XXXXXX = (NVMFD5483NLWF) Operating Junction and Storage Temperature T , T 55 to C J stg A = Assembly Location 175 Y = Year Source Current (Body Diode) I 39 A S W = Work Week ZZ = Lot Traceability Single Pulse DraintoSource Avalanche E 39 mJ AS Energy (T = 25C, V = 10 V, I = 28 A, J GS L(pk) L = 0.1 mH) Lead Temperature for Soldering Purposes T 260 C ORDERING INFORMATION L (1/8 from case for 10 s) Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be NVMFD5483NLT1G DFN8 1500/ assumed, damage may occur and reliability may be affected. (PbFree) Tape & Reel THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) NVMFD5483NLT3G DFN8 5000/ (PbFree) Tape & Reel Parameter Symbol Value Unit NVMFD5483NLWFT1G DFN8 1500/ JunctiontoCase Steady State (Note 2) R 3.4 C/W JC (PbFree) Tape & Reel JunctiontoAmbient Steady State (Note 3) R 49 JA NVMFD5483NLWFT3G DFN8 5000/ 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. (PbFree) Tape & Reel 2. Surfacemounted to an ideal (infinite) heat sink. 2 For information on tape and reel specifications, 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. including part orientation and tape sizes, please 4. Maximum current for pulses as long as 1 second are higher but are dependent refer to our Tape and Reel Packaging Specification on pulse duration and duty cycle. Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: July, 2019 Rev. 3 NVMFD5483NL/DNVMFD5483NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T Reference to 25C 63 mV/C (BR)DSS J Temperature Coefficient I = 250 A D Zero Gate Voltage Drain Current I T = 25C 1.0 A J DSS V = 0 V, GS V = 60 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D Gate Threshold Voltage Temperature V /T Reference to 25C 5.2 mV/C GS(TH) J Coefficient I = 250 A D DraintoSource On Resistance R V = 10 V, I = 15 A 29 36 m DS(on) GS D V = 4.5 V, I = 15 A 36 45 GS D CHARGES AND CAPACITANCES Input Capacitance C 668 pF iss Output Capacitance C V = 0 V, f = 1.0 MHz, V = 25 V 152 oss GS DS Reverse Transfer Capacitance C 67 rss Total Gate Charge Q 23.4 nC G(TOT) Threshold Gate Charge Q 0.65 G(TH) V = 10 V, V = 48 V, GS DS I = 10 A D GatetoSource Charge Q 2.14 GS GatetoDrain Charge Q 9.16 GD Total Gate Charge Q V = 4.5 V, V = 48 V, I = 10 A 13.2 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 6.8 ns d(on) Rise Time t 10.3 r V = 4.5 V, V = 48 V, GS DS I = 5.0 A, R = 2.5 TurnOff Delay Time t D G 37.5 d(off) Fall Time t 23.5 f DRAINSOURCE DIODE CHARACTERISTICS T = 25C 0.87 1.2 Forward Diode Voltage V V SD J V = 0 V, GS I = 10 A S T = 125C 0.82 J Reverse Recovery Time t 30 ns RR Charge Time t 23.3 a V = 0 V, d /d = 100 A/ s, GS IS t I = 10 A S Discharge Time t 6.7 b Reverse Recovery Charge Q 35 nC RR 5. Pulse Test: pulse width = 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2