NVMFD5489NL MOSFET Power, Dual N-Channel, Logic Level 60 V, 65 m , 12 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Designs Low R to Minimize Conduction Losses DS(on) V R MAX I MAX (BR)DSS DS(on) D Low Capacitance to Minimize Driver Losses 65 m 10 V 175C Operating Temperature 60 V 12 A NVMFD5489NLWF Wettable Flank Option for Enhanced Optical 79 m 4.5 V Inspection AECQ101 Qualified and PPAP Capable Dual NChannel This is a PbFree Device D1 D2 MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS G1 G2 GatetoSource Voltage V 20 V GS Continuous Drain Cur- T = 25C I 12 A mb D rent R J mb S1 S2 T = 100C 8.8 (Notes 1, 2, 3, 4) Steady mb State Power Dissipation T = 25C P 23.4 W mb D MARKING DIAGRAM R (Notes 1, 2, 3) J mb T = 100C 11.7 mb 1 D1 D1 Continuous Drain Cur- T = 25C I 4.5 A A D S1 D1 rent R DFN8 5x6 JA T = 100C 3.2 G1 D1 XXXXXX (Notes 1, 3 & 4) Steady A (SO8FL) S2 D2 State AYWZZ CASE 506BT Power Dissipation T = 25C P 3.0 W A D G2 D2 R (Notes 1 & 3) JA T = 100C 1.5 A D2 D2 Pulsed Drain Current T = 25C, t = 10 s I 62 A DM A p XXXXXX = 5489NL XXXXXX = (NVMFD5489NL) or Operating Junction and Storage Temperature T , T 55 to C J stg 175 XXXXXX = 5489LW XXXXXX = (NVMFD5489NLWF) Source Current (Body Diode) I 22 A S A = Assembly Location Single Pulse DraintoSource Avalanche E 19 mJ Y = Year AS Energy (T = 25C, I = 19.5 A, L = 0.1 mH, J L(pk) W = Work Week R = 25 ) G ZZ = Lot Traceability Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the Device Package Shipping device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NVMFD5489NLT1G DFN8 1500/ (PbFree) Tape & Reel THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) NVMFD5489NLT3G DFN8 5000/ Parameter Symbol Value Unit (PbFree) Tape & Reel JunctiontoMounting Board (top) Steady R 6.4 J mb State (Notes 2, 3) NVMFD5489NLWFT1G DFN8 1500/ (PbFree) Tape & Reel JunctiontoAmbient Steady State (Note 3) 50 C/W R JunctiontoAmbient Steady State JA 161 NVMFD5489NLWFT3G DFN8 5000/ (min footprint) (PbFree) Tape & Reel 1. The entire application environment impacts the thermal resistance values shown, For information on tape and reel specifications, they are not constants and are only valid for the particular conditions noted. including part orientation and tape sizes, please 2. Psi ( ) is used as required per JESD51 12 for packages in which refer to our Tape and Reel Packaging Specification substantially less than 100% of the heat flows to single case surface. Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: July, 2019 Rev. 3 NVMFD5489NL/DNVMFD5489NL 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second are higher but are dependent on pulse duration and duty cycle. www.onsemi.com 2