NVLJD4007NZ MOSFET Dual, N-Channel, Small Signal, Gate ESD Protection, 2x2 WDFN 30 V, 245 mA www.onsemi.com R I MAX Features DS(on) D V Typ V (Note 1) (BR)DSS GS Optimized Layout for Excellent High Speed Signal Integrity 1.4 4.5 V Low Gate Charge for Fast Switching 30 V 245 mA 2.3 2.5 V Small 2 x 2 mm Footprint ESD Protected Gate D (6) D (4) AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant G (2) G (5) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit S (1) S (3) DraintoSource Voltage V 30 V DSS NChannel NChannel GatetoSource Voltage V 10 V GS MARKING Continuous Drain Steady State = 25C I 245 mA D DIAGRAM Current (Note 1) 1 6 Power Dissipation Steady State = 25C P 755 mW D WDFN6 JG 2 5 (Note 1) CASE 506AN 3 4 1 Pulsed Drain Current t 10 s I 1.2 A P DM JG = Specific Device Code Operating Junction and Storage Temperature T , 55 to C J M = Date Code T 150 STG = PbFree Package Continuous Source Current (Body Diode) I 245 mA (Note: Microdot may be in either location) SD Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) PIN CONNECTIONS Stresses exceeding those listed in the Maximum Ratings table may damage the D1 device. If any of these limits are exceeded, device functionality should not be S1 D1 1 6 assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS G1 G2 2 5 Parameter Symbol Max Unit D2 JunctiontoAmbient Steady State (Note 1) R 166 C/W JA S2 3 4 D2 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). (Top View) ORDERING INFORMATION Device Package Shipping NVLJD4007NZTAG WDFN6 3000/Tape & (PbFree) Reel NVLJD4007NZTBG WDFN6 3000/Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: July, 2019 Rev. 1 NVLJD4007NZ/DNVLJD4007NZ ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 100 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T Reference to 25C, I = 100 A 27 (BR)DSS J D mV/C Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, V = 30 V 1.0 A DSS GS DS Zero Gate Voltage Drain Current I V = 0 V, V = 20 V, 1.0 A DSS GS DS T = 85 C GatetoSource Leakage Current I V = 0 V, V = 10 V 25 A GSS DS GS GatetoSource Leakage Current I V = 0 V, V = 5 V 1.0 A GSS DS GS GatetoSource Leakage Current I V = 0 V, V = 5 V 1.0 A GSS DS GS T = 85 C ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 100 A 0.5 1.0 1.5 V GS(TH) DS GS D Threshold Temperature Coefficient V /T Reference to 25C, I = 100 A 2.5 mV/C GS(TH) J D DraintoSource On Resistance R V = 4.5 V, I = 125 mA 1.4 7.0 DS(on) GS D V = 2.5 V, I = 125 mA 2.3 7.5 GS D Forward Transconductance g V = 3 V, I = 125 mA 80 mS FS DS D CAPACITANCES & GATE CHARGE Input Capacitance C 12.2 20 ISS V = 5.0 V, f = 1 MHz, DS Output Capacitance C 10 15 pF OSS V = 0 V GS Reverse Transfer Capacitance C 3.3 6.0 RSS Total Gate Charge Q 0.75 g GatetoSource Charge Q 0.20 nC gs V = 24 V, I = 100 mA, DS D V = 4.5 V GS GatetoDrain Charge Q 0.20 gd Plateau Voltage V 1.57 V GP SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 9 ns d(ON) Rise Time t 41 r V = 4.5 V, V = 24 V, GS DS I = 125 mA, R = 10 TurnOff Delay Time t D G 96 ns d(OFF) Fall Time t 72 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, I = 125 mA 0.79 0.9 V SD GS S 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2