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NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single NChannel, DPAK/IPAK Features Trench Technology Low R to Minimize Conduction Losses www.onsemi.com DS(on) Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V R MAX I MAX (BR)DSS DS(ON) D NVD Prefix for Automotive and Other Applications Requiring 4.7 m 10 V 25 V 89 A Unique Site and Control Change Requirements AECQ101 6.8 m 4.5 V Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant D Applications VCORE Applications NChannel G DCDC Converters Low Side Switching S 4 MAXIMUM RATINGS (T = 25C unless otherwise stated) J 4 Parameter Symbol Value Unit 4 DraintoSource Voltage V 25 V DSS GatetoSource Voltage V 20 V 1 GS 2 1 1 2 2 Continuous Drain T = 25C I 16.8 A 3 3 3 A D Current R JA 3 IPAK DPAK IPAK T = 85C 13.0 A (Note 1) CASE 369AC CASE 369AA CASE 369D Power Dissipation T = 25C P 2.14 W (Straight Lead) (Bent Lead) (Straight Lead A D R (Note 1) JA STYLE 2 DPAK) STYLE 2 Continuous Drain T = 25C ID 13.3 A A MARKING DIAGRAMS Current R JA T = 85C 10.3 Steady A (Note 2) & PIN ASSIGNMENTS 4 State Power Dissipation T = 25C P 1.33 W Drain A D 4 4 R (Note 2) JA Drain Drain Continuous Drain T = 25C I 89 A C D Current R JC T = 85C 69 (Note 1) C Power Dissipation T = 25C P 60 W C D R (Note 1) JC 2 Pulsed Drain T = 25C I 179 A t =10 s p A DM 1 2 3 Drain 1 3 Current Gate Drain Source Gate Source 1 2 3 Current Limited by Package T = 25C I 45 A A DmaxPkg Gate Drain Source Operating Junction and Storage T , 55 to C J A = Assembly Location* Temperature T +175 STG Y = Year Source Current (Body Diode) I 50 A WW = Work Week S 4856N = Device Code Drain to Source dV/dt dV/dt 6 V/ns G = PbFree Package Single Pulse DraintoSource Avalanche EAS 180.5 mJ * The Assembly Location Code (A) is front side Energy (T = 25C, V = 50 V, V = 10 V, J DD GS optional. In cases where the Assembly Location is I = 19 A , L = 1.0 mH, R = 25 L pk G stamped in the package bottom (molding ejecter Lead Temperature for Soldering Purposes T 260 C L pin), the front side assembly code may be blank. (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information in the package assumed, damage may occur and reliability may be affected. dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: April, 2017 Rev. 4 NTD4856N/D AYWW 48 56NG AYWW 48 56NG AYWW 48 56NG