NVC6S5A354PLZ Power MOSFET 60V, 100m , 4A, P-Channel This Power MOSFET is produced using ON Semiconductors trench www.onsemi.com technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. V R (on) Max I DSS DS D Max Features 100m 10V 4V drive 60V 135m 4.5V 4A High ESD protection 145m 4.0V Low On-Resistance Pb-Free, Halogen Free and RoHS compliance ELECTRICAL CONNECTION P-Channel Typical Applications Reverse Battery Protection 1, 2, 5, 6 High Side Load Switch 1 : Drain 2 : Drain 3 SPECIFICATIONS 3 : Gate 4 : Source ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) 5 : Drain Parameter SymbolValue Unit 6 : Drain V Drain to Source Voltage DSS 60 V 4 Gate to Source Voltage V V GSS 20 Drain Current (DC) (Note 2) A 4 I MARKING D Drain Current (DC) (Note 3) 3 A Drain Current (Pulse) 6 I 16 A 5 DP 4 PW 10 s, duty cycle 1% Power Dissipation 1 1.9 W 2 Ta=25 C(Note 2) 3 CPH6 P D Power Dissipation 0.9 W Ta=25 C(Note 3) Junction Temperature and Tj, Tstg 55 to +175 C Storage Temperature Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage ORDERING INFORMATION the device. If any of these limits are exceeded, device functionality should not See detailed ordering and shipping information on page 6 of this data sheet. be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter SymbolValue Unit (Note 2) 78.1 C/W Junction to Ambient R JA (Note 3) 160 C/W 2 Note 2 : Surface mounted on ceramic substrate(1500mm 0.8mm). 2 Note 3 : Surface mounted on FR4 board using a 92mm , 1 oz. Cu pad. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : December 2015 - Rev. 0 NVC6S5A354PLZ/D NVC6S5A354PLZ ELECTRICAL CHARACTERISTICS at Ta 25C (Note 4) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I = 1mA, V =0V V BR DSS D GS 60 I V = 60V, V =0V Zero-Gate Voltage Drain Current DSS 1 A DS GS I Gate to Source Leakage Current V = 16V, V =0V 10 A GSS GS DS V (th) Gate Threshold Voltage V = 10V, I = 1mA 1.2 2.6 V GS DS D Forward Transconductance g V = 10V, I = 2A 4.8 S FS DS D I = 2A, V = 10V 77 100 m D GS Static Drain to Source On-State R (on) I = 1A, V = 4.5V 96 135 m DS D GS Resistance I = 1A, V = 4V 103 145 D GS m Input Capacitance Ciss 600 pF V = 20V, f=1MHz Output Capacitance Coss 60 pF DS Reverse Transfer Capacitance Crss 50 pF t (on) Turn-ON Delay Time 5.8 ns d Rise Time t 12 ns r See Fig.1 t (off) Turn-OFF Delay Time d 78 ns t Fall Time 40 ns f Total Gate Charge Qg 14 nC Gate to Source Charge Qgs V = 30V, V = 10V, I = 4A 1.6 nC DS GS D Gate to Drain Miller Charge Qgd 3.4 nC V I = 4A, V =0V Forward Diode Voltage 0.84 1.2 V SD S GS Note 4 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Switching Time Test Circuit www.onsemi.com 2