X-On Electronics has gained recognition as a prominent supplier of NVD3055L170T4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVD3055L170T4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVD3055L170T4G ON Semiconductor

NVD3055L170T4G electronic component of ON Semiconductor
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Part No.NVD3055L170T4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET DPAK 60V .170R TR
Datasheet: NVD3055L170T4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.2281
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.9029
10 : USD 0.9213
100 : USD 0.5199
500 : USD 0.4225
1000 : USD 0.349
2500 : USD 0.318
5000 : USD 0.3096
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.1904
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.2646
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Qualification
Configuration
Series
Brand
Forward Transconductance - Min
Ciss - Input Capacitance
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the NVD3055L170T4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVD3055L170T4G and other electronic components in the MOSFETs category and beyond.

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NTD3055L170, NVD3055L170 MOSFET Power, N-Channel, Logic Level, DPAK/IPAK www.onsemi.com 9.0 A, 60 V Designed for low voltage, high speed switching applications in 9.0 AMPERES, 60 VOLTS power supplies, converters and power motor controls and bridge R = 170 m DS(on) circuits. D Features NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 NChannel Qualified and PPAP Capable G These are PbFree Devices S Typical Applications Power Supplies 4 Converters 4 Power Motor Controls Bridge Circuits 1 2 1 2 MAXIMUM RATINGS (T = 25C unless otherwise noted) 3 3 J DPAK IPAK Rating Symbol Value Unit CASE 369C CASE 369D DraintoSource Voltage V 60 Vdc DSS (Surface Mounted) (Straight Lead) STYLE 2 STYLE 2 DraintoGate Voltage (R = 10 M ) V 60 Vdc DGR GS GatetoSource Voltage Vdc MARKING DIAGRAMS Continuous V 15 GS & PIN ASSIGNMENTS Nonrepetitive (t 10 ms) V 20 p GS Drain Current Adc 1 Gate Continuous T = 25C I 9.0 AYWW A D 4 Continuous T = 100C I 3.0 2 Drain 31 A D Drain Single Pulse (t 10 s) I 27 Apk 70LG p DM 3 Source Total Power Dissipation T = 25C P 28.5 W A D Derate above 25C 0.19 W/C Total Power Dissipation T = 25C (Note 1) 2.1 W 1 Gate A AYWW 4 Total Power Dissipation T = 25C (Note 2) 1.5 W A 2 Drain 31 Drain Operating and Storage Temperature Range T , T 55 to C J stg 70LG 3 Source 175 Single Pulse DraintoSource Avalanche E 30 mJ AS A = Assembly Location* Energy Starting T = 25C J Y = Year (V = 25 Vdc, V = 5.0 Vdc, DD GS WW = Work Week L = 1.0 mH, I (pk) = 7.75 A, V = 60 Vdc) L DS 3170L = Device Code Thermal Resistance C/W G = PbFree Package JunctiontoCase R 5.2 JC * The Assembly Location code (A) is front side JunctiontoAmbient (Note 1) R 71.4 JA optional. In cases where the Assembly Location is JunctiontoAmbient (Note 2) R 100 JA stamped in the package, the front side assembly Maximum Lead Temperature for Soldering T 260 C L code may be blank. Purposes, 1/8 from case for 10 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information in the package assumed, damage may occur and reliability may be affected. dimensions section on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: May, 2019 Rev. 7 NTD3055L170/DNTD3055L170, NVD3055L170 1. When surface mounted to an FR4 board using 0.5 sq in pad size. 2. When surface mounted to an FR4 board using minimum recommended pad size. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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