X-On Electronics has gained recognition as a prominent supplier of NVD4808NT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVD4808NT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVD4808NT4G ON Semiconductor

NVD4808NT4G electronic component of ON Semiconductor
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Part No.NVD4808NT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET Power MOSFET 30V 63A 8 mOhm Single N-Channel DPAK Power MOSFET 30V 63A 8 mOhm Single N-Channel DPAK
Datasheet: NVD4808NT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.8385
10 : USD 0.6967
100 : USD 0.4498
1000 : USD 0.3598
2500 : USD 0.3242
5000 : USD 0.3242
10000 : USD 0.3231
25000 : USD 0.3034
50000 : USD 0.2976
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.3884
N/A

Obsolete
   
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We are delighted to provide the NVD4808NT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVD4808NT4G and other electronic components in the MOSFETs category and beyond.

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NTD4808N, NVD4808N MOSFET Power, Single, N-Channel, DPAK/IPAK 30 V, 63 A Features NTD4808N, NVD4808N MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit Single Pulse DraintoSource Avalanche EAS 144.5 mJ Energy (V = 24 V, V = 10 V, DD GS I = 17 A , L = 1.0 mH, R = 25 L pk G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 2.75 JC JunctiontoTAB (Drain) R 3.5 JC TAB C/W JunctiontoAmbient Steady State (Note 1) R 57 JA JunctiontoAmbient Steady State (Note 2) 107 R JA 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 27 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 1 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D Negative Threshold Temperature V /T 5.6 GS(TH) J mV/C Coefficient DraintoSource On Resistance R V = 10 to 11.5 V I = 30 A 6.7 8.0 DS(on) GS D I = 15 A 6.6 m D V = 4.5 V I = 30 A 10.3 12.4 GS D I = 15 A 9.8 D Forward Transconductance g V = 15 V, I = 15 A 11.4 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1538 ISS Output Capacitance C 334 V = 0 V, f = 1 MHz, V = 12 V pF OSS GS DS Reverse Transfer Capacitance C 180 RSS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width 300 s, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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