X-On Electronics has gained recognition as a prominent supplier of NVD5407NT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVD5407NT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVD5407NT4G ON Semiconductor

NVD5407NT4G electronic component of ON Semiconductor
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Part No.NVD5407NT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET Single N-Channel Power MOSFET 40V, 38A, 26mO, Power MOSFET 40V, 38A, 26 mOhm, Single N-Channel, DPAK.
Datasheet: NVD5407NT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
257: USD 0.4575 ea
Line Total: USD 117.58 
Availability - 2385
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ: 257  Multiples: 1
Pack Size: 1
Availability Price Quantity
2385
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 257
Multiples : 1
257 : USD 0.4575

   
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We are delighted to provide the NVD5407NT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVD5407NT4G and other electronic components in the MOSFETs category and beyond.

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NTD5407N, STD5407N, NVD5407N MOSFET Power, Single, N-Channel, DPAK 40 V, 38 A www.onsemi.com Features Low R DS(on) I MAX High Current Capability D V R TYP (Note 1) (BR)DSS DS(ON) Low Gate Charge 40 V 21 m 10 V 38 A STD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable* NChannel 4 D These Devices are PbFree and are RoHS Compliant Applications 2 1 3 Electronic Brake Systems DPAK G Electronic Power Steering CASE 369C STYLE 2 Bridge Circuits S MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit MARKING DIAGRAM DraintoSource Voltage V 40 V DSS 1 AYWW GatetoSource Voltage V 20 V 54 GS 07NG Continuous Drain T = 25C I 38 A C D Steady Current R JC State T = 100C 27 C A = Assembly Location* Y = Year Power Dissipation Steady T = 25C P 75 W C D WW = Work Week R State JC 5407N = Specific Device Code Continuous Drain Steady T = 25C I 7.6 A G = PbFree Device A D Current R (Note 1) State JA T = 100C 5.3 A * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is Power Dissipation Steady T = 25C P 2.9 W A D stamped in the package, the front side assembly R (Note 1) State JA code may be blank. Pulsed Drain Current t = 10 s I 75 A p DM Operating Junction and Storage Temperature T , 55 to J C ORDERING INFORMATION T 175 STG Device Package Shipping Source Current (Body Diode) I 36 A S NTD5407NT4G DPAK 2500 / Tape & Single Pulse Drainto Source Avalanche EAS 150 mJ (PbFree) Reel Energy (V = 50 V, V = 10 V, I = 17 A, DD GS PK L = 1 mH, R = 25 ) STD5407NT4G* DPAK 2500 / Tape & G (PbFree) Reel Lead Temperature for Soldering Purposes 260 C T L (1/8 from case for 10 s) NVD5407NT4G* DPAK 2500 / Tape & (PbFree) Reel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be For information on tape and reel specifications, assumed, damage may occur and reliability may be affected. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: June, 2019 Rev. 7 NTD5407N/DNTD5407N, STD5407N, NVD5407N THERMAL RESISTANCE RATINGS (Note 1) Parameter Symbol Max Unit JunctiontoCase (Drain) R 2.0 C/W JC JunctiontoAmbient (Note 1) R 52 C/W JA 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in 2 oz including traces). www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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