X-On Electronics has gained recognition as a prominent supplier of NVMJS2D5N06CLTWG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVMJS2D5N06CLTWG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVMJS2D5N06CLTWG ON Semiconductor

NVMJS2D5N06CLTWG electronic component of ON Semiconductor
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Part No.NVMJS2D5N06CLTWG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET N-Channel 60V 164A 8-Pin LFPAK T/R
Datasheet: NVMJS2D5N06CLTWG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 1.0239 ea
Line Total: USD 3071.7 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 3.2763

0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 6.5403
10 : USD 5.6539
100 : USD 4.6319
500 : USD 3.9431
1000 : USD 3.3255

0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 6.5403
10 : USD 5.6539
100 : USD 4.6319
500 : USD 3.9431
1000 : USD 3.3255

0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.0239

0
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 4.806
10 : USD 1.7388
25 : USD 1.6416
100 : USD 1.3932
500 : USD 1.1448
1000 : USD 0.9471
3000 : USD 0.9191

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NVMJS2D5N06CLTWG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVMJS2D5N06CLTWG and other electronic components in the MOSFETs category and beyond.

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MOSFET Power, Single N-Channel 60 V, 2.4 m , 164 A NVMJS2D5N06CL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses V R MAX I MAX G (BR)DSS DS(ON) D LFPAK8 Package, Industry Standard 2.4 m 10 V 60 V 164 A AECQ101 Qualified and PPAP Capable 3.3 m 4.5 V These Devices are PbFree and are RoHS Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) J D (5,8) Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS G (4) Continuous Drain Steady T = 25C I 164 A C D State Current R JC T = 100C 116 (Notes 1, 3) C S (1,2,3) Power Dissipation T = 25C P 113 W C D NCHANNEL MOSFET R (Note 1) JC T = 100C 56 C Continuous Drain Steady T = 25C I 31 A A D Current R State MARKING JA T = 100C 22 (Notes 1, 2, 3) A DIAGRAM DD D D Power Dissipation T = 25C P 3.9 W D A R (Notes 1 & 2) JA T = 100C 2.0 A 2D5N06 Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM CL Operating Junction and Storage Temperature T , T 55 to C LFPAK8 AWLYW J stg + 175 CASE 760AA Source Current (Body Diode) I 94 A 1 S S SS G Single Pulse DraintoSource Avalanche E 565 mJ AS Energy (I = 9 A) 2D5N06CL = Specific Device Code L(pk) A = Assembly Location Lead Temperature for Soldering Purposes T 260 C L WL = Wafer Lot (1/8 from case for 10 s) Y = Year Stresses exceeding those listed in the Maximum Ratings table may damage the W = Work Week device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS ORDERING INFORMATION See detailed ordering, marking and shipping information on Parameter Symbol Value Unit page 5 of this data sheet. JunctiontoCase Steady State R 1.3 C/W JC JunctiontoAmbient Steady State (Note 2) R 38 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: June, 2021 Rev. 1 NVMJS2D5N06CL/DNVMJS2D5N06CL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 26 mV/C (BR)DSS Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 A DSS GS J V = 60 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 135 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.0 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 50 A 2.0 2.4 m DS(on) GS D V = 4.5 V I = 50 A 2.6 3.3 GS D Forward Transconductance g V =15 V, I = 50 A 286 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 3600 pF ISS Output Capacitance C 1700 V = 0 V, f = 1 MHz, V = 25 V OSS GS DS Reverse Transfer Capacitance C 28 RSS Total Gate Charge Q V = 4.5 V, V = 48 V I = 50 A 24 nC G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 48 V I = 50 A 52 G(TOT) GS DS D Threshold Gate Charge Q 6.0 G(TH) GatetoSource Charge Q 12 GS V = 10 V, V = 48 V I = 50 A GS DS D GatetoDrain Charge Q 4.5 GD Plateau Voltage V 3.0 V GP SWITCHING CHARACTERISTICS (Note 5) ns TurnOn Delay Time t 10 d(ON) Rise Time t 55 r V = 10 V, V = 48 V, GS DS I = 50 A, R = 2.5 D G TurnOff Delay Time t 37 d(OFF) Fall Time t 8.5 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.8 1.2 V SD J V = 0 V, GS I = 50 A S T = 125C 0.75 J Reverse Recovery Time t 55 ns RR Charge Time t 28 a V = 0 V, dI /dt = 100 A/ s, GS s I = 50 A S Discharge Time t 28 b Reverse Recovery Charge Q 60 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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