GAN063-650WSAQ Nexperia

GAN063-650WSA 650 V, 50 m Gallium Nitride (GaN) FET 20 March 2020 Product data sheet 1. General description The GAN063-650WSA is a 650 V, 50 m Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperias state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies offering superior reliability and performance. 2. Features and benefits Ultra-low reverse recovery charge Simple gate drive (0 V to +10 V or 12 V) Robust gate oxide (20 V capability) High gate threshold voltage (+4 V) for very good gate bounce immunity Very low source-drain voltage in reverse conduction mode Transient over-voltage capability (800 V) 3. Applications Hard and soft switching converters for industrial and datacom power Bridgeless totempole PFC PV and UPS inverters Servo motor drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage -55 C T 175 C - - 650 V DS j I drain current V = 10 V T = 25 C Fig. 2 - - 34.5 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 143 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 50 60 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge I = 25 A V = 400 V V = 10 V - 4 - nC GD D DS GS T = 25 C j Q total gate charge - 15 - nC G(tot) Source-drain diode Q recovered charge I = 25 A dI /dt = -1000 A/s - 125 - nC r S S V = 0 V V = 400 V Fig. 14 GS DSNexperia GAN063-650WSA 650 V, 50 m Gallium Nitride (GaN) FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 G gate D 2 S source 3 D drain mb S mounting base connected to source G S 1 2 3 aaa-028116 TO-247 (SOT429) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version GAN063-650WSA TO-247 plastic, single-ended through-hole package 3 leads 5.45 mm SOT429 pitch 20.45 mm x 15.6 mm x 4.95 mm body 7. Marking Table 4. Marking codes Type number Marking code GAN063-650WSA GAN063-650WSA 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage -55 C T 175 C - 650 V DS j V transient drain to source pulsed t = 1 s = 0.01 - 800 V TDS p factor voltage V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 143 W tot mb I drain current V = 10 V T = 25 C Fig. 2 - 34.5 A D GS mb V = 10 V T = 100 C Fig. 2 - 24.4 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 150 A DM p mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering - 260 C sld(M) temperature Source-drain diode I source current T = 25 C V = 0 V - 34.5 A S mb GS GAN063-650WSA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 20 March 2020 2 / 11