MOSFET - Power, Single N-Channel 40 V, 0.4 m , 553.8 A NVMTS0D4N04CL Features Small Footprint (8x8 mm) for Compact Design www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS 0.4 m 10 V 40 V 553.8 A Compliant 0.64 m 4.5 V Typical Applications Power Tools, Battery Operated Vacuums D (58) UAV/Drones, Material Handling BMS/Storage, Home Automation MAXIMUM RATINGS (T = 25C unless otherwise noted) J G (1) Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS S (24) GatetoSource Voltage V 20 V GS NCHANNEL MOSFET Continuous Drain T = 25C I 553.8 A C D Current R (Note 2) JC T = 100C I 394.8 A C D Steady State Power Dissipation T = 25C P 244 W C D R (Note 2) JC T = 100C P 122 W C D Continuous Drain T = 25C I 79.8 A A D Current R JA T = 100C I 56.4 A (Notes 1, 2) A D Steady State Power Dissipation T = 25C P 5.0 W A D POWER 88 R (Notes 1, 2) JA T = 100C P 2.5 W A D CASE 507AP Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM Operating Junction and Storage Temperature T , T 55 to C J stg MARKING DIAGRAM Range + 175 Source Current (Body Diode) I 203.4 A S Single Pulse DraintoSource Avalanche E 4454 mJ AS Energy (I = 70 A) XXXXXXXX L(pk) AWLYWW Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be XXX = Device Code assumed, damage may occur and reliability may be affected. (8 AN characters max) A = Assembly Location THERMAL RESISTANCE MAXIMUM RATINGS WL = 2digit Wafer Lot Code Parameter Symbol Value Unit Y = Year Code WW = Work Week Code C/W JunctiontoCase Steady State (Note 2) R 0.61 JC JunctiontoAmbient Steady State (Note 2) R 30.1 JA 2 ORDERING INFORMATION 1. Surfacemounted on FR4 board using a 1 in pad size, 1 oz. Cu pad. See detailed ordering, marking and shipping information in the 2. The entire application environment impacts the thermal resistance values shown, package dimensions section on page 5 of this data sheet. they are not constants and are only valid for the particular conditions noted. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: January, 2020 Rev. 2 NVMTS0D4N04CL/DNVMTS0D4N04CL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / I = 250 A, ref to 25C 8.86 (BR)DSS D mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 DSS GS J A V = 32 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.0 2.5 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T I = 250 A, ref to 25C 6.24 mV/C GS(TH) J D DraintoSource On Resistance R V = 10 V I = 50 A 0.3 0.4 DS(on) GS D m V = 4.5 V I = 50 A 0.45 0.64 GS D Forward Transconductance g V =5 V, I = 50 A 330 S FS DS D Gate Resistance R T = 25C 1.0 G A CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 20600 ISS Output Capacitance C 9500 V = 0 V, f = 1 MHz, V = 20 V pF OSS GS DS Reverse Transfer Capacitance C 390 RSS Total Gate Charge Q V = 4.5 V, V = 20 V I = 50 A 163 G(TOT) GS DS D Threshold Gate Charge Q 29.8 G(TH) GatetoSource Charge Q 51 nC GS GatetoDrain Charge Q 52.1 V = 10 V, V = 20 V I = 50 A GD GS DS D Total Gate Charge Q 341 G(TOT) Voltage Plateau V 2.7 V GP SWITCHING CHARACTERISTICS, V = 4.5 V (Note 4) GS TurnOn Delay Time t 110 d(ON) Rise Time t 147 r V = 4.5 V, V = 20 V, GS DS ns I = 50 A, R = 6 D G TurnOff Delay Time t 217 d(OFF) Fall Time t 107 f SWITCHING CHARACTERISTICS, V = 10 V (Note 4) GS TurnOn Delay Time t 45.6 d(ON) Rise Time t 39.8 r V = 10 V, V = 20 V, GS DS ns I = 50 A, R = 6 D G TurnOff Delay Time t 382 d(OFF) Fall Time t 96.4 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.75 1.2 SD J V = 0 V, GS V I = 50 A S T = 125C 0.58 J Reverse Recovery Time t 117 RR Charge Time t 87 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 50 A Discharge Time t S 30 b Reverse Recovery Charge Q 336 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width 300 s, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2