X-On Electronics has gained recognition as a prominent supplier of XP233N0501TR-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. XP233N0501TR-G MOSFETs are a product manufactured by Torex Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

XP233N0501TR-G Torex Semiconductor

XP233N0501TR-G electronic component of Torex Semiconductor
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Part No.XP233N0501TR-G
Manufacturer: Torex Semiconductor
Category: MOSFETs
Description: MOSFET General-purpose N-channel MOSFET 30V 0.5A SOT-23
Datasheet: XP233N0501TR-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.224 ea
Line Total: USD 0.22 
Availability - 1387
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1387
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.224
10 : USD 0.1568
100 : USD 0.0809
329 : USD 0.0521
903 : USD 0.0493
9000 : USD 0.0478
24000 : USD 0.0476

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the XP233N0501TR-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the XP233N0501TR-G and other electronic components in the MOSFETs category and beyond.

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XP233N0501TR-G ETR11043-001 N-channel MOSFET 30V, 0.5A APPLICATIONS FEATURES On-State Resistance : R (on)=1.5 V =4.5V Switching DS GS Driving Voltage : 2.5V Environmentally Friendly : EU RoHS Compliant, Pb Free EQUIVALENT CIRCUIT PIN CONFIGURATION SOT-23(TO-236) Drain 3 1 2 Source Gate PRODUCT NAME PRODUCT NAME PACKAGE ORDER UNIT XP233N0501TR-G * SOT-23(TO-236) 3,000 pcs/ Reel * The -G suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant ABSOLUTE MAXIMUM RATINGS Ta=25 PARAMETER SYMBOL RATINGS UNITS Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Drain Current (DC) ID 0.5 A (*1) Drain Current(Pulse) IDP 1 A (*2) Channel Power Dissipation Pd 0.4 W Junction Temperature TJ 150 Storage Temperature T -55~+150 stg (*1) PW 10s,duty cycle1% (*2) When implemented on a PCB defined by JESD51-7 1/6 XP233N0501TR-G ELECTRICAL CHARACTERISTICS Ta=25 PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Drain-Source Breakdown Voltage V I = 250A, V = 0V 30 - - V (BR)DSS D GS Drain-Source Leakage Current I V = 30V, V = 0V - - 1 A DSS DS GS Gate-Source Leakage Current I V = 15V, V = 0V - - 10 A GSS GS DS Gate Threshold Voltage V I = 250uA, V = V 0.9 1.3 1.7 V GS(off) D DS GS V = 4.5V, I = 100mA - 0.6 1.5 GS D Drain-Source On Resistance R DS(on) V = 2.5V, I = 100mA - 1.5 4 GS D Input Capacitance Ciss - 40 - pF V = 10V, V = 0V DS GS Output Capacitance Coss - 12 - pF f= 1MHz Reverse Transfer Capacitance Crss - 6 - pF Turn-on Delay Time t - 7 - ns d(on) Rise Time t - 5 - ns r V = 10V, I = 200mA DD D Turn-off Delay Time t V = 10V - 30 - ns d(off) GS Fall Time t - 8 - ns f Total Gate Charge Q - 0.78 - nC g V = 10V, I = 250mA DS D Gate-Source Charge Q - 0.1 - nC gs VGS= 10V Gate-Drain Charge Q - 0.16 - nC gd Diode Forward Voltage V I = 100mA, V = 0V - 0.7 1.1 V SD S GS NOTES ON USE 1. Please use this IC within the absolute maximum ratings. Even within the ratings, in case of high load use continuously such as high temperature, high voltage, high current and thermal stress may cause reliability degradation of the IC. 2. Torex places an importance on improving our products and their reliability. We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in their systems. 2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Torex Semicon
Torex Semiconductor Ltd
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