V 1200 V
DS
I @ 25C 115 A
D
C3M0016120D
R 16 m
DS(on)
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
N-Channel Enhancement Mode
Features Package
3rd generation SiC MOSFET technology
High blocking voltage with low on-resistance
High-speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Q )
rr
Halogen free, RoHS compliant
Benefits
Reduce switching losses and minimize gate ringing
Higher system efficiency
Reduce cooling requirements
Increase power density
Increase system switching frequency
Applications
Solar inverters
EV motor drive
High voltage DC/DC converters
Switched mode power supplies
Load switch
Marking
Part Number Package
C3M0016120D TO 247-3 C3M0016120D
Maximum Ratings (T = 25 C unless otherwise specified)
C
Symbol Parameter Value Unit Test Conditions Note
V Drain - Source Voltage 1200 V V = 0 V, I = 100 A
GS D
DSmax
V Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note 1
GSmax
V Gate - Source Voltage (static) -4/+15 V Static Note 2
GSop
115 VGS = 15 V, TC = 25C
Continuous Drain Current A Fig. 19
I
D
85 V = 15 V, T = 100C
GS C
Pulsed Drain Current 250 A Pulse width t limited by T
I jmax
D(pulse) P
Power Dissipation 556 W T =25C, T = 175 C Fig. 20
P
C J
D
-40 to
T , T Operating Junction and Storage Temperature C
J stg
+175
T Solder Temperature 260 C 1.6mm (0.063) from case for 10s
L
1 Nm
M Mounting Torque M3 or 6-32 screw
d
8.8 lbf-in
Note (1): When using MOSFET Body Diode V = -4V/+19V
GSmax
Note (2): MOSFET can also safely operate at 0/+15 V
1 C3M0016120D Rev. -, 08-2019Electrical Characteristics (T = 25C unless otherwise specified)
C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V Drain-Source Breakdown Voltage 1200 V V = 0 V, I = 100 A
(BR)DSS GS D
1.8 2.5 3.6
V VDS = VGS, ID = 23 mA
V Gate Threshold Voltage Fig. 11
GS(th)
2.0 V V = V , I = 23 mA, T = 175C
DS GS D J
IDSS Zero Gate Voltage Drain Current 1 50 A V = 1200 V, V = 0 V
DS GS
I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V
GSS GS DS
11.2 16 22.3 V = 15 V, I = 75 A
GS D
Fig. 4,
R Drain-Source On-State Resistance m
DS(on)
5, 6
28.8 V = 15 V, I = 75 A, T = 175C
GS D J
53
VDS= 20 V, IDS= 75 A
gfs Transconductance S Fig. 7
47 V = 20 V, I = 75 A, T = 175C
DS DS J
C Input Capacitance 6085
iss
VGS = 0 V, VDS = 1000 V
Fig. 17,
Coss Output Capacitance 230 pF
18
f = 100 KHz
Crss Reverse Transfer Capacitance 13
AC
V = 25 mV
E C Stored Energy 130 J Fig. 16
oss oss
EON Turn-On Switching Energy (SiC Diode FWD) 4.64
V = 800 V, V = -4 V/+15 V, I = 75 A,
DS GS
D
mJ Fig. 26
R = 5, L= 65.7 H, Tj = 175C
E Turn Off Switching Energy (SiC Diode FWD) 2.93
OFF G(ext)
EON Turn-On Switching Energy (Body Diode FWD) 7.79
V = 800 V, V = -4 V/+15 V, I = 75 A,
DS GS
D
mJ Fig. 26
R = 5, L= 65.7 H, Tj = 175C
E Turn Off Switching Energy (Body Diode FWD) 2.95
OFF
G(ext)
t Turn-On Delay Time 174
d(on)
V = 800 V, V = -4 V/15 V
DD GS
t Rise Time 28
r
ns R = 5 , I = 75 A, L= 65.7 H Fig. 27
G(ext)
D
t Turn-Off Delay Time 84
d(off)
Timing relative to V , Inductive load
DS
t Fall Time 27
f
,
RG(int) Internal Gate Resistance 2.6 f = 1 MHz V = 25 mV
AC
Q Gate to Source Charge 70
gs
V = 800 V, V = -4 V/15 V
DS GS
Q Gate to Drain Charge 60 I = 75 A
gd nC D Fig. 12
Per IEC60747-8-4 pg 21
Q Total Gate Charge 207
g
2 C3M0016120D Rev. -, 08-2019