V 900 V DS I 25C 63 A D C3M0030090K R 30 m DS(on) Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package TM C3M SiC MOSFET technology TAB Drain Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Q ) rr Halogen free, RoHS compliant Benefits Drain (Pin 1, TAB) Reduce switching losses and minimize gate ringing 1 2 3 4 D S S G Higher system efficiency Reduce cooling requirements Increase power density Gate Increase system switching frequency (Pin 4) Driver Power Source Source Applications (Pin 3) (Pin 2) Solar inverters EV battery chargers High voltage DC/DC converters Marking Part Number Package Switch Mode Power Supplies C3M0030090K TO 247-4 C3M0030090K Maximum Ratings (T = 25 C unless other wise specified) C Symbol Parameter Value Unit Test Conditions Note Drain - Source Voltage 900 V V = 0 V, I = 100 A V GS D DSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1 V GSmax V Gate - Source Voltage (static) -4/+15 V Static Note: 2 GSop 63 Fig. 19 V = 15 V, T = 25C GS C I Continuous Drain Current A D 40 V = 15 V, T = 100C GS C I Pulsed Drain Current 200 A Fig. 22 Pulse width t limited by T D(pulse) jmax P Power Dissipation 149 W T =25C, T = 150 C Fig. 20 P C J D -55 to Operating Junction and Storage Temperature C T , T J stg +150 Solder Temperature 260 C 1.6mm (0.063) from case for 10s T L Note (1): When using MOSFET Body Diode V = -4V/+19V GSmax Note (2): MOSFET can also safely operate at 0/+15 V 1 C3M0030090K Rev. -, 01-2018Electrical Characteristics (T = 25C unless other wise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 900 V V = 0 V, I = 100 A (BR)DSS GS D 1.7 2.4 3.5 V VDS = VGS, ID = 11 mA V Gate Threshold Voltage Fig. 11 GS(th) 1.7 V = V , I = 11 mA, T = 150C V DS GS D J I Zero Gate Voltage Drain Current 1 100 A V = 900 V, V = 0 V DSS DS GS I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V GSS GS DS 30 39 V = 15 V, I = 35 A GS D Fig. 4, R Drain-Source On-State Resistance m DS(on) 5, 6 37 VGS = 15 V, ID = 35 A, TJ = 150C 22 VDS= 20 V, IDS= 35 A gfs Transconductance S Fig. 7 21 VDS= 20 V, IDS= 35 A, TJ = 150C C Input Capacitance 1864 iss V = 0 V, V = 600 V GS DS Fig. 17, Coss Output Capacitance 131 pF 18 f = 1 MHz Crss Reverse Transfer Capacitance 4 VAC = 25 mV E C Stored Energy 33 J Fig. 16 oss oss E Turn-On Switching Energy (SiC Diode FWD) 0.22 ON VDS = 600 V, VGS = -4 V/15 V, I = 35 A, Fig. 26, D mJ 29b R = 2.5, L= 56 H, TJ = 150C G(ext) E Turn Off Switching Energy (SiC Diode FWD) 0.12 OFF E Turn-On Switching Energy (Body Diode FWD) 0.40 ON V = 600 V, V = -4 V/15 V, I = 35 A, DS GS Fig. 26, D mJ 29a R = 2.5, L= 56 H, T = 150C J EOFF Turn Off Switching Energy (Body Diode FWD) 0.09 G(ext) t Turn-On Delay Time 15 d(on) V = 600 V, V = -4 V/15 V DD GS t Rise Time 22 r I = 35 A, R = 2.5 , D G(ext) ns Fig. 27 Timing relative to V DS t Turn-Off Delay Time 32 d(off) Inductive load t Fall Time 9 f , RG(int) Internal Gate Resistance 3 f = 1 MHz VAC = 25 mV Qgs Gate to Source Charge 19 V = 600 V, V = -4 V/15 V DS GS Qgd Gate to Drain Charge 30 ID = 35 A nC Fig. 12 Per IEC60747-8-4 pg 21 Q Total Gate Charge 87 g (T = 25C unless other wise specified) Reverse Diode Characteristics C Symbol Parameter Typ. Max. Unit Test Conditions Note 4.8 V V = -4 V, I = 17.5 A GS SD Fig. 8, VSD Diode Forward Voltage 9, 10 4.5 V V = -4 V, I = 17.5 A, T = 150 C GS SD J I Continuous Diode Forward Current 30 A V = -4 V, T = 25 C Note 1 S GS C IS, pulse Diode pulse Current 200 A Note 1 V = -4 V, pulse width t limited by T jmax GS P t Reverse Recover time 62 ns rr V = -4 V, I = 35 A, V = 600 V GS SD R Note 1 Q Reverse Recovery Charge 545 nC rr dif/dt = 2680 A/s, T = 150 C J I Peak Reverse Recovery Current 28 A rrm Thermal Characteristics Symbol Parameter Max. Unit Test Conditions Note R Thermal Resistance from Junction to Case 0.84 JC C/W Fig. 21 R Thermal Resistance From Junction to Ambient 40 JA 2 C3M0030090K Rev. -, 01-2018