STW70N60DM6, STWA70N60DM6 Datasheet N-channel 600 V, 36 m typ., 62 A, MDmesh DM6 Power MOSFETs in TO 247 and TO247 long leads packages Features V R I Order code DS DS(on) max. D STW70N60DM6 3 2 600 V 42 m 62 A 3 1 2 STWA70N60DM6 1 TO-247 TO-247 long leads Fast-recovery body diode Lower R per area vs previous generation DS(on) Low gate charge, input capacitance and resistance D(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected G(1) Applications S(3) AM01476v1 tab Switching applications Description These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q ), recovery time (t ) and excellent rr rr improvement in R per area with one of the most effective switching behaviors DS(on) Product status links available in the market for the most demanding high-efficiency bridge topologies and STW70N60DM6 ZVS phase-shift converters. STWA70N60DM6 Product summary STW70N60DM6 Order code STW70N60DM6 Marking 70N60DM6 Package TO-247 Packing Tube STWA70N60DM6 Order code STWA70N60DM6 Marking 70N60DM6 Package TO-247 long leads Packing Tube DS12274 - Rev 4 - June 2020 www.st.com For further information contact your local STMicroelectronics sales office.STW70N60DM6, STWA70N60DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 62 A D C I Drain current (continuous) at T = 100 C 39 A D C (1) I Drain current (pulsed) 220 A D P Total power dissipation at T = 25 C 390 W TOT C (2) dv/dt Peak diode recovery voltage slope 100 V/ns (2) Peak diode recovery current slope 1000 A/s di/dt (3) dv/dt MOSFET dv/dt ruggedness 100 V/ns T Storage temperature range C STG -55 to 150 T Operating junction temperature range C J 1. Pulse width is limited by safe operating area. 2. I 25 A, V < V , V = 400 V SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.32 C/W thj-case R Thermal resistance junction-ambient 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 7 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 1850 mJ AS j D AR DD DS12274 - Rev 4 page 2/14