STW75N60DM6, STWA75N60DM6 Datasheet N-channel 600 V, 32 m typ., 72 A MDmesh DM6 Power MOSFETs in TO-247 and TO-247 long leads packages Features V R max. I Order codes DS DS(on) D STW75N60DM6 600 V 36 m 72 A STWA75N60DM6 3 2 3 1 2 1 Fast-recovery body diode TO-247 TO-247 long leads Lower R per area vs previous generation DS(on) Low gate charge, input capacitance and resistance 100% avalanche tested D(2, TAB) Extremely high dv/dt ruggedness Zener-protected G(1) Applications Switching applications S(3) AM01476v1 tab Description These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q ), recovery time (t ) and excellent rr rr improvement in R per area with one of the most effective switching behaviors DS(on) available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STW75N60DM6 STWA75N60DM6 Product summary Order code STW75N60DM6 Marking 75N60DM6 Package TO-247 Packing Tube Order code STWA75N60DM6 Marking 75N60DM6 Package TO-247 long leads Packing Tube DS12280 - Rev 3 - July 2020 www.st.com For further information contact your local STMicroelectronics sales office.STW75N60DM6, STWA75N60DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 72 A D C I Continuous collector current at T = 100 C 45 A D C (1) I Drain current (pulsed) 240 A DM P Total power dissipation at T = 25 C 446 W TOT C (2) dv/dt Peak diode recovery voltage slope 100 V/ns (2) Peak diode recovery current slope 1000 A/s di/dt (3) dv/dt MOSFET dv/dt ruggedness 100 V/ns T Storage temperature range STG - 55 to 150 C T Operating junction temperature range J 1. Pulse width limited by safe operating area. 2. I 72 A, V (peak) < V , V = 400 V SD DS (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.28 C/W thj-case R Thermal resistance junction-ambient 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 9 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 1.7 J AS (starting T = 25 C, I = I V = 50 V) j D AR DD DS12280 - Rev 3 page 2/14