SSM6L14FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L14FE Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.60.05 N-ch: 1.5-V drive P-ch: 1.5-V drive 1.20.05 N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch:R = 330 m (max) ( V = 2.5 V) DS(ON) GS 1 6 R = 240 m (max) ( V = 4.5 V) DS(ON) GS Q2 P-ch:R = 440 m (max) ( V = -2.5 V) DS(ON) GS 2 5 R = 300 m (max) ( V = -4.5 V) DS(ON) GS Q1 = Absolute Maximum Ratings (Ta 25C) 3 4 Characteristics Symbol Rating Unit Drain-source voltage V 20 V DSS Gate-source voltage V 10 V GSS DC I 0.8 D 1.Source1 4.Source2 Drain current A Pulse I 1.6 DP 2.Gate1 5.Gate2 3.Drain2 6.Drain1 Q2 Absolute Maximum Ratings (Ta = 25C) ES6 JEDEC Characteristics Symbol Rating Unit JEITA Drain-source voltage V 20 V DSS TOSHIBA 2-2N1D Gate-source voltage V 8 V GSS DC I 0.72 D Weight: 3.0 mg (typ.) Drain current A Pulse I 1.44 DP Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Power dissipation P (Note 1) 150 mW D Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Mounted on an FR4 board. (total dissipation) 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 0.135 mm 6 ) Marking Equivalent Circuit (top view) 6 4 5 6 5 4 Q1 Q2 LL5 Start of commercial production 2009-12 1 2 3 1 2 3 1 2014-03-01 1.60.05 0.550.05 1.00.05 0.5 0.5 0.120.05 0.20.05SSM6L14FE Q1 Electrical Characteristics = (Ta 25C) Characteristics Symbol Test Conditions Min Typ. Max Unit V I = 1 mA, V = 0 V 20 (BR) DSS D GS Drain-source breakdown voltage V V I = 1 mA, V = - 10 V 12 (BR) DSX D GS Drain cutoff current I V = 20 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.35 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 500 mA (Note 2) 1.05 2.1 S fs DS D I = 500 mA, V = 4.5 V (Note 2) 185 240 D GS I = 400 mA, V = 2.5 V (Note 2) 245 330 D GS Drain-source ON-resistance R m DS (ON) I = 250 mA, V = 1.8 V (Note 2) 310 450 D GS I = 150 mA, V = 1.5 V (Note 2) 370 600 D GS Input capacitance C 90 iss V = 10 V, V = 0 V, f = 1 MHz pF Output capacitance C 21 oss DS GS Reverse transfer capacitance C 15 rss Total gate charge Q 2.00 g V = 10 V, I = 0.8 A DS D Gate-source charge Q 1.02 nC gs V = 4.5 V GS Gate-drain charge Q 0.98 gd Turn-on time t 18 on V = 10 V, I = 200 mA DD D Switching time ns V = 0 to 2.5 V, R = 4.7 GS G Turn-off time t 50 off Drain-source forward voltage V I = -0.8 A, V = 0 V (Note 2) -0.84 -1.2 V DSF D GS Q2 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Conditions Min Typ. Max Unit V I = -1 mA, V = 0 V -20 (BR) DSS D GS Drain-source breakdown voltage V V I = -1 mA, V = 8 V -12 (BR) DSX D GS Drain cutoff current I V = -20 V, V = 0 V -10 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -400 mA (Note2) 850 mS fs DS D I = -400 mA, V = -4.5 V (Note2) 0.25 0.30 D GS I = -200 mA, V = -2.5 V (Note2) 0.34 0.44 D GS Drain-source ON-resistance R DS (ON) I = -100 mA, V = -1.8 V (Note2) 0.44 0.67 D GS I = -50 mA, V = -1.5 V (Note2) 0.55 1.04 D GS C 110 Input capacitance iss Output capacitance C V = -10 V, V = 0 V, f = 1 MHz 28 pF DS GS oss Reverse transfer capacitance C 20 rss Total gate charge Q 1.76 g V = -10 V, I = -720 mA DS DS Gatesource charge Q 1.22 nC gs V = -4.5 V GS Gatedrain charge Q 0.54 gd Turn-on time t 11 on V = -10 V, I = -100 mA DD D Switching time ns V = 0 to -2.5 V, R = 50 Turn-off time t GS G 38 off Drain-source forward voltage V I = 720 mA, V = 0 V (Note2) 0.85 1.2 V DSF D GS Note 2: Pulse test 2 2014-03-01