IRF9630S, SiHF9630S www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount V (V) -200 Available in tape and reel DS Dynamic dV/dt rating R ( )V = -10 V 0.80 DS(on) GS Available Repetitive avalanche rated Q max. (nC) 29 g P-channel Q (nC) 5.4 gs Fast switching Available Q (nC) 15 Ease of paralleling gd Material categorization: for definitions of compliance Configuration Single please see www.vishay.com/doc 99912 Note S * This datasheet provides information about parts that are 2 D PAK (TO-263) RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. G DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and D G cost-effectiveness. D S 2 The D PAK (TO-263) is a surface mount power package P-Channel MOSFET capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The 2 D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 Package D PAK (TO-263) D PAK (TO-263) a Lead (Pb)-free and Halogen-free SiHF9630S-GE3 SiHF9630STRL-GE3 a IRF9630SPbF IRF9630STRLPbF Lead (Pb)-free a SiHF9630S-E3 SiHF9630STL-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -200 DS V Gate-Source Voltage V 20 GS T = 25 C -6.5 C Continuous Drain Current V at -10 V I GS D T = 100 C -4.0 A C a Pulsed Drain Current I -26 DM Linear Derating Factor 0.59 W/C e Linear Derating Factor (PCB mount) 0.025 b Single Pulse Avalanche Energy E 500 mJ AS a Avalanche Current I -6.4 A AR a Repetitive Avalanche Energy E 7.4 mJ AR Maximum Power Dissipation T = 25 C 74 C P W D e Maximum Power Dissipation (PCB mount) T = 25 C 3.0 A c Peak Diode Recovery dV/dt dV/dt -5.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = -50 V, starting T = 25 C, L = 17 mH, R = 25 , I = -6.5 A (see fig. 12). DD J g AS c. I -6.5 A, dI/dt 120 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S16-0754-Rev. D, 02-May-16 Document Number: 91085 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF9630S, SiHF9630S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Maximum Junction-to-Ambient R -40 C/W thJA a (PCB mount) Maximum Junction-to-Case (Drain) R -1.7 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = -250 A -200 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = -1 mA - -0.24 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = -250 A -2.0 - -4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = -200 V, V = 0 V - - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = -160 V, V = 0 V, T = 125 C - - -500 DS GS J b Drain-Source On-State Resistance R V = -10 V I = -3.9 A - - 0.80 DS(on) GS D b Forward Transconductance g V = -50 V, I = -3.9 A 2.8 - - S fs DS D Dynamic Input Capacitance C - 700 - iss V = 0 V, GS Output Capacitance C -V = -25 V, 200- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -40- rss Total Gate Charge Q -- 29 g I = -6.5 A, V = -160 V, D DS Gate-Source Charge Q --V = -10 V 5.4 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --15 gd Turn-On Delay Time t -12 - d(on) Rise Time t -27 - r V = -100 V, I = -6.5 A, DD D ns b R = 12 , R = 15 , see fig. 10 Turn-Off Delay Time t -2g D 8- d(off) Fall Time t -24- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L die contact -7.5 - S S Gate Input Resistance R f = 1 MHz, open drain 0.6 - 3.7 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- -6.5 S showing the A integral reverse G a Pulsed Diode Forward Current I -- -26 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = -6.5 A, V = 0 V -- -6.5 V SD J S GS Body Diode Reverse Recovery Time t - 200 300 ns rr b T = 25 C, I = -6.5 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.9 2.9 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S16-0754-Rev. D, 02-May-16 Document Number: 91085 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000