SSM6L39TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L39TU Power Management Switch Applications High-Speed Switching Applications Unit: mm 2.10.1 N-ch: 1.5-V drive 1.70.1 P-ch: 1.8-V drive N-ch, P-ch, 2-in-1 1 6 Low ON-resistance Q1 N-ch: R = 247 m (max) ( V = 1.5 V) on GS R = 190 m (max) ( V = 1.8 V) 2 5 on GS R = 139 m (max) ( V = 2.5 V) on GS 3 4 Q2 P-ch: R = 430 m (max) ( V = 1.8 V) on GS R = 294 m (max) ( V = 2.5 V) on GS Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 20 V DSS 4.Source2 1.Source1 Gate-source voltage V 10 V GSS 5.Gate2 2.Gate1 DC I 1.6 D 6.Drain1 3.Drain2 Drain current A Pulse I 3.2 DP UF6 Q2 Absolute Maximum Ratings (Ta = 25C) JEDEC Characteristics Symbol Rating Unit JEITA Drain-source voltage V 20 V DSS TOSHIBA 2-2T1B Gate-source voltage V 8 V GSS Weight: 7.0 mg (typ.) DC I 1.5 D Drain current A Pulse I 3 DP Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain power dissipation P (Note 1) 500 mW D Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 Note1: Mounted on an FR4 board. (total dissipation) (25.4 mm 25.4 mm 1.6 mm, Cu Pad : 645 mm ) Marking Equivalent Circuit (top view) 6 4 5 65 4 Q1 Q2 LL1 1 2 3 12 3 Start of commercial production 2008-01 1 2014-03-01 2.00.1 1.30.1 0.70.05 0.65 0.65 0.1660.05 +0.1 0.3-0.05SSM6L39TU Q1 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Conditions Min Typ. MaxUnit V I = 1 mA, V = 0 V 20 (BR) DSS D GS Drain-source breakdown voltage V V I = 1 mA, V = -10 V 12 (BR) DSX D GS Drain cutoff current I V =20 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 10 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.35 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 1A (Note 2) 2.5 5.0 S fs DS D I = 1 A, V = 4.0 V (Note 2) 87 119 D GS I = 1 A, V = 2.5 V (Note 2) 105 139 D GS Drain-source ON-resistance R m DS (ON) I = 0.8 A, V = 1.8 V (Note 2) 125 190 D GS I = 0.3 A, V = 1.5 V (Note 2) 145 247 D GS Input capacitance C 260 iss V = 10 V, V = 0 V, f = 1 MHz pF Output capacitance C 45 oss DS GS Reverse transfer capacitance C 37 rss Total Gate Charge Q 7.5 g GateSource Charge Q V = 10 V, I = 1.6 A, V = 4 V 5.6 nC gs DS D GS GateDrain Charge Q 1.9 gd Turn-on time t 8.3 on V = 10 V, I = 0.5 A DD D Switching time ns V = 0 to 2.5 V, R = 4.7 GS G Turn-off time t 11.5 off Drain-source forward voltage V I = -1.6 A, V = 0 V (Note 2) -0.8 V DSF D GS -1.2 Q2 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Conditions Min Typ. MaxUnit V I = -1 mA, V = 0 V -20 (BR) DSS D GS Drain-source breakdown voltage V V I = -1 mA, V = +8 V -12 (BR) DSX D GS Drain cutoff current I V = -20 V, V = 0 V -10 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -1 A (Note 2) 1.6 3.2 S fs DS D I = -1.0 A, V = -4 V (Note 2) 160 213 D GS Drain-source ON-resistance R m I = -0.8 A, V = -2.5 V (Note 2) 210 294 DS (ON) D GS I = -0.1 A, V = -1.8 V (Note 2) 280 430 D GS Input capacitance C 250 iss Output capacitance C V = -10 V, V = 0 V, f = 1 MHz 43 pF DS GS oss Reverse transfer capacitance C 35 rss Total Gate Charge Q 6.4 g GateSource Charge Q V = -10 V, I = -1.5 A, V = -4 V 4.5 nC gs DS D GS GateDrain Charge Q 1.9 gd Turn-on time t 12 on V = -10 V, I = -1 A, DD D Switching time ns V = 0 to -2.5 V, R = 4.7 GS G Turn-off time t 11.2 off 1.2 Drain-source forward voltage V I = 1.5 A, V = 0 V (Note 2) 0.88 V DSF D GS Note 2: Pulse test 2 2014-03-01