SSM6L36FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36FE High-Speed Switching Applications Unit: mm 1.60.05 1.5-V drive 1.20.05 Low ON-resistance Q1 Nch: R = 1.52 (max) ( V = 1.5 V) on GS R = 1.14 (max) ( V = 1.8 V) on GS R = 0.85 (max) ( V = 2.5 V) on GS 1 6 R = 0.66 (max) ( V = 4.5 V) on GS R = 0.63 (max) ( V = 5.0 V) on GS 2 5 Q2 Pch: R = 3.60 (max) ( V = -1.5 V) on GS R = 2.70 (max) ( V = -1.8 V) on GS 3 4 R = 1.60 (max) ( V = -2.8 V) on GS R = 1.31 (max) ( V = -4.5 V) on GS Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit 1.Source1 4.Source2 2.Gate1 5.Gate2 Drainsource voltage V 20 V DSS ES6 3.Drain2 6.Drain1 Gatesource voltage V 10 V GSS JEDEC - DC I 500 D Drain current mA Pulse I 1000 DP JEITA - TOSHIBA 2-2N1D Q2 Absolute Maximum Ratings (Ta = 25C) Weight: 3.0 mg (typ.) Characteristics Symbol Rating Unit Drainsource voltage V -20 V DSS Gatesource voltage V 8 V GSS DC I -330 D Drain current mA Pulse I -660 DP Absolute Maximum Ratings (Ta = 25 C) (Common to the Q1, Q2) Characteristics Symbol Rating Unit Drain power dissipation P (Note 1) 150 mW D Channel temperature T 150 C ch Storage temperature range T -55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on an FR4 board 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 0.135 mm 6) Start of commercial production 2008-06 1 2014-11-14 1.60.05 0.550.05 1.00.05 0.5 0.5 0.120.05 0.20.05SSM6L36FE Q1 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit V I = 1 mA, V = 0 V 20 (BR) DSS D GS Drain-source breakdown voltage V V I = 1 mA, V = - 10 V 12 (BR) DSX D GS Drain cutoff current I V =20 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 10 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.35 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 200 mA (Note2) 420 840 mS fs DS D I = 200 mA, V = 5.0 V (Note2) 0.46 0.63 D GS I = 200 mA, V = 4.5 V (Note2) 0.51 0.66 D GS Drain-source ON-resistance R I = 200 mA, V = 2.5 V (Note2) 0.66 0.85 DS (ON) D GS I = 100 mA, V = 1.8 V (Note2) 0.81 1.14 D GS I = 50 mA, V = 1.5 V (Note2) 0.95 1.52 D GS Input capacitance C 46 iss Output capacitance C V = 10 V, V = 0 V, f = 1 MHz 10.8 pF oss DS GS Reverse transfer capacitance C 7.3 rss Total Gate Charge Q 1.23 g GateSource Charge Q V = 10 V, I = 0.5 A, V = 4.0 V 0.60 nC gs DS D GS Q GateDrain Charge 0.63 gd Turn-on time t V = 10 V, I = 200 mA 30 on DD D Switching time ns Turn-off time t V = 0 to 2.5 V, R = 50 75 off GS G Drain-source forward voltage V I = -0.5 A, V = 0 V (Note2) -0.88 -1.2 V DSF D GS Q2 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Conditions Min Typ. Max Unit V I = -1 mA, V = 0 V -20 (BR) DSS D GS Drain-source breakdown voltage V V I = -1 mA, V = 8 V -12 (BR) DSX D GS Drain cutoff current I V = -16 V, V = 0 V -10 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Y V = -3 V, I = -100 mA (Note2) 190 mS Forward transfer admittance fs DS D I = -100 mA, V = -4.5 V (Note2) 0.95 1.31 D GS I = -80 mA, V = -2.8 V (Note2) 1.22 1.60 D GS Drain-source ON-resistance R DS (ON) I = -40 mA, V = -1.8 V (Note2) 1.80 2.70 D GS I = -30 mA, V = -1.5 V (Note2) 2.23 3.60 D GS Input capacitance C 43 iss Output capacitance C V = -10 V, V = 0 V, f = 1 MHz 10.3 pF oss DS GS Reverse transfer capacitance C 6.1 rss Total Gate Charge Q 1.2 g GateSource Charge Q 0.85 gs V = -10 V, I = -330mA, V = -4 V nC DS DS GS GateDrain Charge Q 0.35 gd Turn-on time t 90 on V = -10 V, I = -100 mA DD D Switching time ns V = 0 to -2.5 V, R = 50 Turn-off time t 200 GS G off Drain-source forward voltage V I = 330 mA, V = 0 V (Note2) 0.88 1.2 V DSF D GS Note 2: Pulse test 2 2014-11-14