X-On Electronics has gained recognition as a prominent supplier of SSM6L36FE,LM MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM6L36FE,LM MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM6L36FE,LM Toshiba

SSM6L36FE,LM electronic component of Toshiba
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Part No.SSM6L36FE,LM
Manufacturer: Toshiba
Category: MOSFETs
Description: Trans MOSFET N/P-CH 20V 0.5A/0.33A 6-Pin SOT-563
Datasheet: SSM6L36FE,LM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1778 ea
Line Total: USD 0.89 
Availability - 760
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
760
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 5
Multiples : 5
5 : USD 0.1778
50 : USD 0.1447
150 : USD 0.1306
500 : USD 0.113
3000 : USD 0.1052
6000 : USD 0.1004

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Product Type
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
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We are delighted to provide the SSM6L36FE,LM from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM6L36FE,LM and other electronic components in the MOSFETs category and beyond.

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SSM6L36FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36FE High-Speed Switching Applications Unit: mm 1.60.05 1.5-V drive 1.20.05 Low ON-resistance Q1 Nch: R = 1.52 (max) ( V = 1.5 V) on GS R = 1.14 (max) ( V = 1.8 V) on GS R = 0.85 (max) ( V = 2.5 V) on GS 1 6 R = 0.66 (max) ( V = 4.5 V) on GS R = 0.63 (max) ( V = 5.0 V) on GS 2 5 Q2 Pch: R = 3.60 (max) ( V = -1.5 V) on GS R = 2.70 (max) ( V = -1.8 V) on GS 3 4 R = 1.60 (max) ( V = -2.8 V) on GS R = 1.31 (max) ( V = -4.5 V) on GS Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit 1.Source1 4.Source2 2.Gate1 5.Gate2 Drainsource voltage V 20 V DSS ES6 3.Drain2 6.Drain1 Gatesource voltage V 10 V GSS JEDEC - DC I 500 D Drain current mA Pulse I 1000 DP JEITA - TOSHIBA 2-2N1D Q2 Absolute Maximum Ratings (Ta = 25C) Weight: 3.0 mg (typ.) Characteristics Symbol Rating Unit Drainsource voltage V -20 V DSS Gatesource voltage V 8 V GSS DC I -330 D Drain current mA Pulse I -660 DP Absolute Maximum Ratings (Ta = 25 C) (Common to the Q1, Q2) Characteristics Symbol Rating Unit Drain power dissipation P (Note 1) 150 mW D Channel temperature T 150 C ch Storage temperature range T -55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on an FR4 board 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 0.135 mm 6) Start of commercial production 2008-06 1 2014-11-14 1.60.05 0.550.05 1.00.05 0.5 0.5 0.120.05 0.20.05SSM6L36FE Q1 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit V I = 1 mA, V = 0 V 20 (BR) DSS D GS Drain-source breakdown voltage V V I = 1 mA, V = - 10 V 12 (BR) DSX D GS Drain cutoff current I V =20 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 10 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.35 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 200 mA (Note2) 420 840 mS fs DS D I = 200 mA, V = 5.0 V (Note2) 0.46 0.63 D GS I = 200 mA, V = 4.5 V (Note2) 0.51 0.66 D GS Drain-source ON-resistance R I = 200 mA, V = 2.5 V (Note2) 0.66 0.85 DS (ON) D GS I = 100 mA, V = 1.8 V (Note2) 0.81 1.14 D GS I = 50 mA, V = 1.5 V (Note2) 0.95 1.52 D GS Input capacitance C 46 iss Output capacitance C V = 10 V, V = 0 V, f = 1 MHz 10.8 pF oss DS GS Reverse transfer capacitance C 7.3 rss Total Gate Charge Q 1.23 g GateSource Charge Q V = 10 V, I = 0.5 A, V = 4.0 V 0.60 nC gs DS D GS Q GateDrain Charge 0.63 gd Turn-on time t V = 10 V, I = 200 mA 30 on DD D Switching time ns Turn-off time t V = 0 to 2.5 V, R = 50 75 off GS G Drain-source forward voltage V I = -0.5 A, V = 0 V (Note2) -0.88 -1.2 V DSF D GS Q2 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Conditions Min Typ. Max Unit V I = -1 mA, V = 0 V -20 (BR) DSS D GS Drain-source breakdown voltage V V I = -1 mA, V = 8 V -12 (BR) DSX D GS Drain cutoff current I V = -16 V, V = 0 V -10 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Y V = -3 V, I = -100 mA (Note2) 190 mS Forward transfer admittance fs DS D I = -100 mA, V = -4.5 V (Note2) 0.95 1.31 D GS I = -80 mA, V = -2.8 V (Note2) 1.22 1.60 D GS Drain-source ON-resistance R DS (ON) I = -40 mA, V = -1.8 V (Note2) 1.80 2.70 D GS I = -30 mA, V = -1.5 V (Note2) 2.23 3.60 D GS Input capacitance C 43 iss Output capacitance C V = -10 V, V = 0 V, f = 1 MHz 10.3 pF oss DS GS Reverse transfer capacitance C 6.1 rss Total Gate Charge Q 1.2 g GateSource Charge Q 0.85 gs V = -10 V, I = -330mA, V = -4 V nC DS DS GS GateDrain Charge Q 0.35 gd Turn-on time t 90 on V = -10 V, I = -100 mA DD D Switching time ns V = 0 to -2.5 V, R = 50 Turn-off time t 200 GS G off Drain-source forward voltage V I = 330 mA, V = 0 V (Note2) 0.88 1.2 V DSF D GS Note 2: Pulse test 2 2014-11-14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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