CPH3356 Power MOSFET 20V, 137m , 2.5A, Single P-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low on resistance. This devices is suitable for applications with low gate www.onsemi.com charge driving or low on resistance requirements. Features Low On-Resistance V R (on) Max I DSS DS D Max 1.8V drive 137m 4.5V ESD Diode-Protected Gate 20V 203m 2.5V 2.5A Pb-Free, Halogen Free and RoHS compliance 323m 1.8V Typical Applications Load Switch ELECTRICAL CONNECTION Motor Driver P-Channel SPECIFICATIONS 3 ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter SymbolValue Unit Drain to Source Voltage V 20 V DSS Gate to Source Voltage V 10 V GSS 1 1:Gate Drain Current (DC) I 2.5 A D 2:Source Drain Current (Pulse) 3:Drain I 10 A DP PW 10s, duty cycle 1% 2 Power Dissipation When mounted on ceramic substrate P 1 W D 2 (900mm 0.8mm) PACKING TYPE : TL MARKING Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. TL THERMAL RESISTANCE RATINGS Parameter SymbolValue Unit ORDERING INFORMATION Junction to Ambient See detailed ordering and shipping R 125 C/W When mounted on ceramic substrate JA information on page 5 of this data sheet. 2 (900mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : April 2015 - Rev. 2 CPH3356/D WN LOTNo.CPH3356 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 20 V BR DSS D GS Zero-Gate Voltage Drain Current I V =20V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I =1mA 0.4 1.4 V GS DS D Forward Transconductance g V =10V, I =1A 2.7 S FS DS D R (on)1 I =1A, V =4.5V 105 137m DS D GS Static Drain to Source On-State R (on)2 I =0.5A, V =2.5V 145 203 m DS D GS Resistance 215 323 R (on)3 I =0.1A, V =1.8V m DS D GS Input Capacitance Ciss 250 pF Output Capacitance Coss V =10V, f=1MHz 60 pF DS Reverse Transfer Capacitance Crss 45 pF Turn-ON Delay Time t (on) 5.7 ns d Rise Time 11 ns t r See specified Test Circuit Turn-OFF Delay Time t (off) 34 ns d Fall Time 20 ns t f Total Gate Charge Qg 3.3 nC Gate to Source Charge Qgs 0.65 nC V =10V, V =4.5V, I =2.5A DS GS D Gate to Drain Miller Charge Qgd 0.72 nC V Forward Diode Voltage I =2.5A, V=0V 0.87 1.5 V SD S GS Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V = --10V IN DD 0V --4.5V I =--1A D V IN R =10 L D V OUT PW=10s D.C.1% G CPH3356 P.G 50 S www.onsemi.com 2