CPH6442 Power MOSFET www.onsemi.com 60V, 43m , 6A, Single N-Channel V R (on) Max I DSS DS D Max Features 43 m 10V 4V Drive 60V 59 m 4.5V 6A Low On-Resistance 65 m 4V ESD Diode-Protected Gate Pb-Free, and RoHS Compliance Halogen Free Compliance : CPH6442-TL-W Electrical Connection N-Channel Specifications 1,2,5,6 Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value Unit Drain to Source Voltage V 60V DSS Gate to Source Voltage V 20 V GSS 1:Drain 3 2:Drain Drain Current (DC) I 6A D 3:Gate Drain Current (Pulse) 4:Source I 24 A DP 5:Drain PW10s, duty cycle1% 6:Drain 4 Power Dissipation When mounted on ceramic substrate P 1.6 W D 2 (900mm 0.8mm) C Junction Temperature Tj 150 Packing Type : TL Marking Storage Temperature Tstg 55 to +150 C Thermal Resistance Ratings Parameter Symbol Value Unit TL Junction to Ambient C/W When mounted on ceramic substrate R 78.1 JA 2 (900mm 0.8mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : March 2015 - Rev. 3 CPH6442/D ZU LOTNo.CPH6442 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 60 V BR DSS D GS Zero-Gate Voltage Drain Current I V =60V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 1.2 2.6V GS DS D Forward Transconductance g V =10V, I=3A 2.6 4.4 S FS DS D R(on)1 I =3A, V=10V 33 43m DS D GS Static Drain to Source On-State Resistance R(on)2 I =1.5A, V=4.5V 42 59m DS D GS R(on)3 I =1.5A, V=4V 46 65m DS D GS Input Capacitance Ciss 1040 pF Output Capacitance Coss V =20V, f=1MHz 90 pF DS Reverse Transfer Capacitance Crss 55 pF Turn-ON Delay Time t (on) 12 ns d Rise Time t 18 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 80 ns d Fall Time t 35 ns f Total Gate Charge Qg 20 nC Gate to Source Charge Qgs V =30V, V =10V, I =6A 3.0 nC DS GS D Gate to Drain Miller Charge Qgd 4.2 nC Forward Diode Voltage V I =6A, V=0V 0.82 1.2V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V =30V V DD IN 10V 0V I =3A D V IN R =10 L D V OUT PW=10s D.C.1% G CPH6442 P.G 50 S www.onsemi.com 2