X-On Electronics has gained recognition as a prominent supplier of CPH6443-TL-H MOSFETs across the USA, India, Europe, Australia, and various other global locations. CPH6443-TL-H MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CPH6443-TL-H ON Semiconductor

CPH6443-TL-H electronic component of ON Semiconductor
CPH6443-TL-H ON Semiconductor
CPH6443-TL-H MOSFETs
CPH6443-TL-H  Semiconductors

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See Product Specifications
Part No. CPH6443-TL-H
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET SWITCHING DEVICE
Datasheet: CPH6443-TL-H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1810: USD 0.2591 ea
Line Total: USD 468.97 
Availability - 2910
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ: 1810  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 1810
Multiples : 1
1810 : USD 0.2591

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CPH6443-TL-H from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CPH6443-TL-H and other electronic components in the MOSFETs category and beyond.

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CPH6443 Power MOSFET 35V, 37m , 6A, Single N-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance V R (on) Max I DSS DS D Max 4V drive 37m 10V ESD Diode-Protected Gate 35V 61m 4.5V 6A Pb-Free, Halogen Free and RoHS compliance 73m 4V Typical Applications ELECTRICAL CONNECTION DC/DC Converter N-Channel Current Balance Switch for Backlight 1,2,5,6 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter SymbolValue Unit 1:Drain 2:Drain Drain to Source Voltage V 35V DSS 3 3:Gate 4:Source Gate to Source Voltage V 20 V GSS 5:Drain Drain Current (DC) I 6A D 6:Drain Drain Current (Pulse) 4 I 24 A DP PW 10s, duty cycle 1% Power Dissipation PACKING TYPE : TL MARKING When mounted on ceramic substrate P 1.6 W D 2 (1200mm 0.8mm) Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage TL the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping THERMAL RESISTANCE RATINGS information on page 5 of this data sheet. Parameter SymbolValue Unit Junction to Ambient When mounted on ceramic substrate R 78.1 C/W JA 2 (1200mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : September 2015 - Rev. 2 CPH6443/D ZV LOTNo.CPH6443 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 35 V BR DSS D GS Zero-Gate Voltage Drain Current I V =35V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I=1mA 1.2 2.6V GS DS D Forward Transconductance g V =10V, I=3A 2.9 S FS DS D R (on)1 I =3A, V=10V 28 37m DS D GS Static Drain to Source On-State 43 61 R (on)2 I =1.5A, V =4.5V m DS D GS Resistance R (on)3 I =1.5A, V =4V 52 73 m DS D GS Input Capacitance Ciss 470 pF Output Capacitance Coss 70 pF V =20V, f=1MHz DS Reverse Transfer Capacitance Crss 35 pF Turn-ON Delay Time t (on) 8 ns d Rise Time t 17 ns r See specified Test Circuit Turn-OFF Delay Time 32 ns t (off) d Fall Time 22 ns t f Total Gate Charge Qg 10 nC Gate to Source Charge Qgs 2 nC V =20V, V =10V, I =6A DS GS D Gate to Drain Miller Charge Qgd 2 nC Forward Diode Voltage V SD I =6A, V=0V 0.84 1.2V S GS Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =20V IN DD 10V 0V I =3A D V IN R =6.7 L D V OUT PW=10s D.C.1% G CPH6443 P.G 50 S www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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