CPH6414 Ordering number : EN7299A N-Channel Silicon MOSFET General-Purpose Switching Device CPH6414 Applications Features Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V 30 V DSS Gate-to-Source Voltage V 20 V GSS Drain Current (DC) I 5A D Drain Current (Pulse) I PW 10s, duty cycle 1% 20 A DP 2 Allowable Power Dissipation P Mounted on a ceramic board (1200mm0.8mm) 1.6 W D Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =30V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V = 16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =3A 3.1 4.5 S DS D R (on)1 I =3A, V =10V 37 48 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =1.5A, V =4V 63 88 m DS D GS Input Capacitance Ciss V =10V, f=1MHz 460 pF DS Output Capacitance Coss V =10V, f=1MHz 95 pF DS Reverse Transfer Capacitance Crss V =10V, f=1MHz 75 pF DS Turn-ON Delay Time t (on) See specified Test Circuit. 11 ns d Rise Time t See specified Test Circuit. 12 ns r Turn-OFF Delay Time t (off) See specified Test Circuit. 31 ns d Fall Time t See specified Test Circuit. 18 ns f Marking : KQ Continued on next page. 2011, SCILLC. All rights reserved. Publication Order Number: www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Jan-2011, Rev. 0 CPH6414/DCPH6414 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Total Gate Charge Qg V =10V, V =10V, I =5A 8.5 nC DS GS D Gate-to-Source Charge Qgs V =10V, V =10V, I =5A 1.8 nC DS GS D Gate-to-Drain Miller Charge Qgd V =10V, V =10V, I =5A 1.3 nC DS GS D Diode Forward Voltage V I =5A, V =0V 0.86 1.2 V SD S GS Package Dimensions Switching Time Test Circuit unit : mm 7018-003 V =15V V IN DD 10V 0.4 0.15 0V 65 4 I =3A D V IN R =5 L D V 0.05 OUT PW=10s D.C. 1% G 132 0.95 1 : Drain 2.9 2 : Drain CPH6414 3 : Gate P.G 50 S 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 I -- V I -- V D DS D GS 5 10 V =10V DS 9 8 4 7 3 6 5 2 4 3 1 2 1 0 0 0 0.2 0.4 0.6 0.8 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain-to-Source Voltage, V -- V IT05169 Gate-to-Source Voltage, V -- V IT05170 DS GS R (on) -- V R (on) -- Ta DS GS DS 200 100 Ta=25C 80 150 60 100 40 I =3.0A D 50 I =1.5A 20 D 0 0 23 4 5 6798 10 --60 --40 --20 0 20 40 60 80 100 120 140 Gate-to-Source Voltage, V -- V IT05171 Ambient Temperature, Ta -- C IT05172 GS Rev.0 I Page 2 of 4 I www.onsemi.com V =2.0V GS 2.5V I =3.0A, V =10V D GS I =1.5A, V =4.0V D GS 3.0V 3.5V 25C --25C 4.0V Ta=75C 8.0V 10V 6.0V Static Drain-to-Source On-State Resistance, R (on) -- m Drain Current, I -- A DS D 0.6 1.6 0.6 0.7 0.2 0.9 2.8 0.2 Static Drain-to-Source On-State Resistance, R (on) -- m Drain Current, I -- A DS D