CPH3327 Ordering number : ENN7914 P-Channel Silicon MOSFET General-Purpose Switching Device CPH3327 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V --100 V DSS Gate-to-Source Voltage V 20 V GSS Drain Current (DC) I --0.6 A D Drain Current (Pulse) I PW 10s, duty cycle 1% --2.4 A DP 2 Allowable Power Dissipation P Mounted on a ceramic board (900mm0.8mm) 1 W D Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0 --100 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--100V, V =0 --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--300mA 0.5 1.0 S DS D R (on)1 I =--300mA, V =--10V 1.1 1.45 DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--300mA, V =--4V 1.2 1.7 DS D GS Input Capacitance Ciss V =--20V, f=1MHz 245 pF DS Output Capacitance Coss V =--20V, f=1MHz 16 pF DS Reverse Transfer Capacitance Crss V =--20V, f=1MHz 13 pF DS Turn-ON Delay Time t (on) See specified Test Circuit. 8.5 ns d Rise Time t See specified Test Circuit. 2.7 ns r Turn-OFF Delay Time t (off) See specified Test Circuit. 36 ns d Fall Time t See specified Test Circuit. 16 ns f Marking : YC Continued on next page. 2011, SCILLC. All rights reserved. Publication Order Number: www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Jan-2011, Rev. 0 CPH3327/DCPH3327 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Total Gate Charge Qg V =--50V, V =--10V, I =--0.6A 7.0 nC DS GS D Gate-to-Source Charge Qgs V =--50V, V =--10V, I =--0.6A 1.0 nC DS GS D Gate-to-Drain Miller Charge Qgd V =--50V, V =--10V, I =--0.6A 1.0 nC DS GS D Diode Forward Voltage V I =--0.6A, V =0 --0.85 --1.2 V SD S GS Package Dimensions Switching Time Test Circuit unit : mm 2152A V = --50V V IN DD 0V --10V 2.9 0.15 I = --300mA 0.4 D V IN R =166 L 3 D V OUT 0.05 PW=10s D.C.1% G 1 2 1.9 1 : Gate CPH3327 P.G 2 : Source 50 S 3 : Drain SANYO : CPH3 I -- V I -- V D DS D GS --0.6 --1.0 V = --10V DS --0.9 --0.5 --0.8 --0.7 --0.4 --0.6 --0.3 --0.5 --0.4 --0.2 --0.3 --0.2 --0.1 --0.1 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 Drain-to-Source Voltage, V -- V IT07478 Gate-to-Source Voltage, V -- V IT07479 DS GS R (on) -- V R (on) -- Ta DS GS DS 3.0 3.0 Ta=25C I = --0.3A D 2.5 2.5 2.0 2.0 1.5 1.5 1.0 1.0 0.5 0.5 0 0--2 --4---6-8--10 --12 --14 --16 --18 --20 --60 --40 --20 0 2040 60 80 100 120 140 160 IT07480 IT07481 Gate-to-Source Voltage, V -- V Ambient Temperature, Ta -- C GS Rev.0 I Page 2 of 4 I www.onsemi.com V = --2.5V GS I = --0.3A, V = --10V D GS I = --0.3A, V = --4V D GS --3.0V --3.5V --4.0V --8.0V --10.0V 25C Ta=75C --25C Static Drain-to-Source On-State Resistance, R (on) -- Drain Current, I -- A DS D 0.7 0.2 0.6 1.6 0.6 0.9 2.8 0.2 Static Drain-to-Source On-State Resistance, R (on) -- Drain Current, I -- A DS D