5Ordering number : ENN7530 CPH6328 P-Channel Silicon MOSFET CPH6328 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2151A 4V drive. CPH6328 2.9 0.15 6 5 4 0.05 1 23 0.95 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 0.4 6 : Drain Specifications SANYO : CPH6 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V --100 V DSS Gate-to-Source Voltage V 20 V GSS Drain Current (DC) I --1.6 A D Drain Current (Pulse) I PW 10s, duty cycle 1% --6.4 A DP 2 Allowable Power Dissipation P Mounted on a ceramic board (900mm0.8mm) 1.6 W D Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0 --100 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--100V, V =0 --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--0.8A 1.5 2.3 S DS D R (on)1 I =--0.8A, V =--10V 410 530 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--0.8A, V =--4V 530 730 m DS D GS Marking : YE Continued on next page. 2011, SCILLC. All rights reserved. Publication Order Number: www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Jan-2011, Rev. 0 CPH6328/D 0.7 0.2 0.6 1.6 0.6 0.9 2.8 0.2CPH6328 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Input Capacitance Ciss V =--20V, f=1MHz 535 pF DS Output Capacitance Coss V =--20V, f=1MHz 43 pF DS Reverse Transfer Capacitance Crss V =--20V, f=1MHz 31 pF DS Turn-ON Delay Time t (on) See specified Test Circuit. 9 ns d Rise Time t See specified Test Circuit. 5 ns r Turn-OFF Delay Time t (off) See specified Test Circuit. 62 ns d Fall Time t See specified Test Circuit. 34 ns f Total Gate Charge Qg V =--50V, V =--10V, I =--1.6A 11 nC DS GS D Gate-to-Source Charge Qgs V =--50V, V =--10V, I =--1.6A 2.6 nC DS GS D Gate-to-Drain Miller Charge Qgd V =--50V, V =--10V, I =--1.6A 2 nC DS GS D Diode Forward Voltage V I =--1.6A, V =0 --0.83 --1.2 V SD S GS Switching Time Test Circuit V = --50V DD V IN 0V I = --0.8A D --10V R =62.5 L V IN V D OUT PW=10s D.C.1% G P.G 50 CPH6328 S I -- V I -- V D DS D GS --3.0 --2.0 V = --10V DS --1.8 --2.5 --1.6 --1.4 --2.0 --1.2 --1.0 --1.5 --0.8 --1.0 --0.6 --0.4 --0.5 --0.2 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0--1 --2 --3 --4 --5 Drain-to-Source Voltage, V -- V IT06006 Gate-to-Source Voltage, V -- V IT06007 DS GS R (on) -- V R (on) -- Ta DS GS DS 800 800 Ta=25C 750 750 I = --0.8A D 700 700 650 650 600 600 550 550 500 450 500 400 450 350 400 300 350 250 300 200 0---2-4 --6--8---10 -12 --14 --16 --18 --20 --60 --40 --20 0 20 40 60 80 100 120 140 Gate-to-Source Voltage, V -- V IT06008 Ambient Temperature, Ta -- C IT06009 GS Rev.0 I Page 2 of 4 I www.onsemi.com V = --3.0V GS I = --0.8A, V = --10V D GS I = --0.8A, V = --4V D GS --3.5V --5.0V --4.0V --6.0V --8.0V --10V Ta=25C 75C --25C Static Drain-to-Source On-State Resistance, R (on) -- m Drain Current, I -- A DS D Static Drain-to-Source On-State Resistance, R (on) -- m Drain Current, I -- A DS D