X-On Electronics has gained recognition as a prominent supplier of ZXMP7A17KTC MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZXMP7A17KTC MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ZXMP7A17KTC Diodes Incorporated

ZXMP7A17KTC electronic component of Diodes Incorporated
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See Product Specifications
Part No.ZXMP7A17KTC
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: P-Channel 70 V 3.8A (Ta) 2.11W (Ta) Surface Mount TO-252-3
Datasheet: ZXMP7A17KTC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.312 ea
Line Total: USD 780 
Availability - 375875
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
375875
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.312
5000 : USD 0.312
7500 : USD 0.312
10000 : USD 0.312
12500 : USD 0.312

1406
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8513
10 : USD 0.7498
30 : USD 0.6982
100 : USD 0.6485
500 : USD 0.3999
1000 : USD 0.3846

16752
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.847
10 : USD 0.6413
100 : USD 0.4708
500 : USD 0.3553
1000 : USD 0.3322
2500 : USD 0.3311

2319
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 303
Multiples : 1
303 : USD 0.4294

12125
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.3563

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the ZXMP7A17KTC from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXMP7A17KTC and other electronic components in the MOSFETs category and beyond.

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ZXMP7A17K 70V P-channel enhancement mode MOSFET Summary V =70V : R =0.16 DSS DS(on) I =5.7A D Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance G Fast switching speed Low threshold Low gate drive S DPAK package Applications DC-DC converters D Power management functions Disconnect switches Motor control Class D audio output stages D GS Ordering information Pinout - top view Device Reel size Tape width Quantity per reel (inches) (mm) ZXMP7A17KTC 13 16 2,500 Device marking ZXMP 7A17 Issue 2 - August 2006 1 www.zetex.com Zetex Semiconductors plc 2006ZXMP7A17K Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage V -70 V DSS Gate-source voltage V 20 V GS (b) I -5.7 A Continuous drain current V =10V T =25C D GS A (b) -4.6 V =10V T =25C GS A (a) -3.8 V =10V T =25C GS A (c) I -17.7 A Pulsed drain current DM (b) I -9.2 A Continuous source current (body diode) S (c) I -17.7 A Pulsed source current (body diode) SM (a) P 4.17 W Power dissipation at T =25C D A 33.3 mW/C Linear derating factor (b) P 9.25 W Power dissipation at T =25C D A 74 mW/C Linear derating factor (d) P 2.11 W Power dissipation at T =25C D A 16.8 mW/C Linear derating factor Operating and storage temperature range T , T -55 to +150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 30 C/W Junction to ambient JA (b) R 13.5 C/W Junction to ambient JA (c) R 59.1 C/W Junction to ambient JA NOTES: (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum junction temperature. (d)For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 2 - August 2006 2 www.zetex.com Zetex Semiconductors plc 2006

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
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