ZXMP6A17E6TA Diodes Incorporated

ZXMP6A17E6 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I Max D Fast Switching Speed V R Max (BR)DSS DS(on) T = +25C A Low Threshold (Note 6) Low Gate Drive 125m V = -10V -3.0 A GS Low Input Capacitance -60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 190m V = -4.5V -2.4 A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high Case: SOT-26 efficiency power management applications. Case Material: Molded Plastic UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe DC-DC Converters Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.018 grams (Approximate) Disconnect Switches Motor Control SOT-26 D G S Equivalent Circuit Pin Out - Top View Top View Ordering Information (Note 4) Part Number Compliance Case Quantity per reel ZXMP6A17E6TA Standard SOT-26 3,000 Note: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXMP6A17E6 Maximum Ratings ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage -60 V VDSS Gate-Source Voltage 20 V V GS (Note 6) -3 Continuous Drain Current -2.4 A V = -10V T = +70C (Note 6) I GS A D (Note 5) -2.3 Pulsed Drain Current (Note 7) -13.6 A V = -10V I GS DM Continuous Source Current (Body Diode) (Note 6) -2.5 A I S Pulsed Source Current (Body Diode) (Note 7) -13.6 A I SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 1.1 (Note 5) Power Dissipation 8.8 W P D Linear Derating Factor 1.92 mW/C (Note 6) 15.4 (Note 5) 113 Thermal Resistance, Junction to Ambient R C/W JA (Note 6) 65 Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Same as Note 5, except the device is measured at t 5 sec. 7. Same as Note 5, except the device is pulsed with D = 0.02 and pulse width 300s. The pulse current is limited by the maximum junction temperature. Thermal Characteristics 1.2 R DS(ON) 10 Limited 1.0 0.8 1 DC 0.6 1s 10ms 100m 100ms 0.4 1ms 100us 10us 0.2 10m Single Pulse, T =25C amb 0.0 1 10 100 0 25 50 75 100 125 150 -V Drain-Source Voltage (V) Temperature (C) DS P-channel Safe Operating Area Derating Curve Single Pulse 100 100 T =25C amb 80 D=0.5 60 10 Single Pulse 40 D=0.2 D=0.05 20 D=0.1 1 0 100 1m 10m 100m 1 10 100 1k 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation 2 of 7 ZXMP6A17E6 March 2015 Diodes Incorporated www.diodes.com Document Number: DS33589 Rev. 5 - 2 ADVANCE INFORMATION Thermal Resistance (C/W) -I Drain Current (A) D Max Power Dissipation (W) Maximum Power (W)