CPH6347 Power MOSFET www.onsemi.com 20V, 39m , 6A, Single P-Channel V R (on) Max I DSS DS D Max Features 39m 4.5V Low Gate Drive Voltage 66m 2.5V 20V 6A ESD Diode-Protected Gate 102m 1.8V Pb-Free, Halogen Free and RoHS Compliance Specifications Electrical Connection Absolute Maximum Ratings at Ta = 25C P-Channel Unit Parameter Symbol Value 1,2,5,6 Drain to Source Voltage V 20 V DSS Gate to Source Voltage V 12 V GSS Drain Current (DC) I 6A D 1:Drain Drain Current (Pulse) 3 2:Drain I 24 A DP 3:Gate PW10s, duty cycle1% 4:Source Power Dissipation 5:Drain When mounted on ceramic substrate P 1.6W 6:Drain D 4 2 (900mm 0.8mm) C Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 Packing Type : TL Marking Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Ambient TL When mounted on ceramic substrate R 78.1 C/W JA 2 (900mm 0.8mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : March 2015 - Rev. 2 CPH6347/D YZ LOTNo.CPH6347 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 20 V BR DSS D GS Zero-Gate Voltage Drain Current I V =20V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I =1mA 0.4 1.4 V GS DS D Forward Transconductance g V =10V, I =3A 4.3 7.3 S FS DS D R(on)1 I =3A, V =4.5V 30 39m DS D GS Static Drain to Source On-State Resistance R(on)2 I =1.5A, V =2.5V 44 66m DS D GS R(on)3 I =0.6A, V =1.8V 68 102m DS D GS Input Capacitance Ciss 860 pF Output Capacitance Coss V =10V, f=1MHz 170 pF DS Reverse Transfer Capacitance Crss 130 pF Turn-ON Delay Time t (on) 10 ns d Rise Time t 48 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 100 ns d Fall Time t 78 ns f Total Gate Charge Qg 10.5 nC Gate to Source Charge Qgs V =10V, V =4.5V, I =6A 2.0 nC DS GS D Gate to Drain Miller Charge Qgd 3.0 nC Forward Diode Voltage V I =6A, V=0V 0.82 1.5 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V = --10V DD IN 0V --4.5V I =--3A D V IN R =3.3 L D V OUT PW=10s D.C.1% G CPH6347 P.G 50 S www.onsemi.com 2