X-On Electronics has gained recognition as a prominent supplier of CPH6412-TL-E MOSFETs across the USA, India, Europe, Australia, and various other global locations. CPH6412-TL-E MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CPH6412-TL-E ON Semiconductor

CPH6412-TL-E electronic component of ON Semiconductor
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Part No.CPH6412-TL-E
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ULTRAHIGH-SPEED SWITCHING APPLICATIONS
Datasheet: CPH6412-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2108 ea
Line Total: USD 632.4 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 85
Multiples : 1
85 : USD 0.2416

0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.2108

   
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We are delighted to provide the CPH6412-TL-E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CPH6412-TL-E and other electronic components in the MOSFETs category and beyond.

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CPH6412 Ordering number : EN7607A N-Channel Silicon MOSFET CPH6412 General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V 30 V DSS Gate-to-Source Voltage V 20 V GSS Drain Current (DC) I 6A D Drain Current (Pulse) I PW 10s, duty cycle 1% 24 A DP 2 Allowable Power Dissipation P When mounted on ceramic substrate (900mm0.8mm) 1.6 W D Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =30V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =3A 4.2 6 S DS D R (on)1 I =3A, V =10V 25 33 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =1.5A, V =4.5V 35 49 m DS D GS R (on)3 I =1.5A, V =4V 37 52 m DS D GS Marking : KN Continued on next page. 2011, SCILLC. All rights reserved. Publication Order Number: www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Jan-2011, Rev. 0 CPH6412/DCPH6412 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Input Capacitance Ciss V =10V, f=1MHz 690 pF DS Output Capacitance Coss V =10V, f=1MHz 160 pF DS Reverse Transfer Capacitance Crss V =10V, f=1MHz 88 pF DS Turn-ON Delay Time t (on) See sepcified Test Circuit. 11 ns d Rise Time t See specified Test Circuit. 45 ns r Turn-OFF Delay Time t (off) See specified Test Circuit. 60 ns d Fall Time t See specified Test Circuit. 35 ns f Total Gate Charge Qg V =10V, V =10V, I =5A 16 nC DS GS D Gate-to-Source Charge Qgs V =10V, V =10V, I =5A 3.4 nC DS GS D Gate-to-Drain Miller Charge Qgd V =10V, V =10V, I =5A 2.4 nC DS GS D Diode Forward Voltage V I =6A, V =0V 0.84 1.2 V SD S GS Package Dimensions Switching Time Test Circuit unit : mm (typ) 7018A-003 V =15V V IN DD 2.9 0.15 10V 0V 645 I =3A D V IN R =5 L 0.05 D V OUT PW=10s D.C.1% 1 2 3 G 0.95 1 : Drain 0.4 2 : Drain CPH6412 3 : Gate P.G 50 S 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 I -- V I -- V D DS D GS 6 8 V =10V DS 7 5 6 4 5 4 3 3 2 2 1 1 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain-to-Source Voltage, V -- V IT06300 Gate-to-Source Voltage, V -- V IT06301 DS GS Rev.0 I Page 2 of 4 I www.onsemi.com V =2.0V GS 2.5V 3.0V 25C 3.5V 4.5V Ta=75C --25C 4.0V 6.0V 10V Drain Current, I -- A D 0.9 2.8 0.2 0.6 1.6 0.6 0.2 Drain Current, I -- A D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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