CPH6412 Ordering number : EN7607A N-Channel Silicon MOSFET CPH6412 General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V 30 V DSS Gate-to-Source Voltage V 20 V GSS Drain Current (DC) I 6A D Drain Current (Pulse) I PW 10s, duty cycle 1% 24 A DP 2 Allowable Power Dissipation P When mounted on ceramic substrate (900mm0.8mm) 1.6 W D Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =30V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =3A 4.2 6 S DS D R (on)1 I =3A, V =10V 25 33 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =1.5A, V =4.5V 35 49 m DS D GS R (on)3 I =1.5A, V =4V 37 52 m DS D GS Marking : KN Continued on next page. 2011, SCILLC. All rights reserved. Publication Order Number: www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Jan-2011, Rev. 0 CPH6412/DCPH6412 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Input Capacitance Ciss V =10V, f=1MHz 690 pF DS Output Capacitance Coss V =10V, f=1MHz 160 pF DS Reverse Transfer Capacitance Crss V =10V, f=1MHz 88 pF DS Turn-ON Delay Time t (on) See sepcified Test Circuit. 11 ns d Rise Time t See specified Test Circuit. 45 ns r Turn-OFF Delay Time t (off) See specified Test Circuit. 60 ns d Fall Time t See specified Test Circuit. 35 ns f Total Gate Charge Qg V =10V, V =10V, I =5A 16 nC DS GS D Gate-to-Source Charge Qgs V =10V, V =10V, I =5A 3.4 nC DS GS D Gate-to-Drain Miller Charge Qgd V =10V, V =10V, I =5A 2.4 nC DS GS D Diode Forward Voltage V I =6A, V =0V 0.84 1.2 V SD S GS Package Dimensions Switching Time Test Circuit unit : mm (typ) 7018A-003 V =15V V IN DD 2.9 0.15 10V 0V 645 I =3A D V IN R =5 L 0.05 D V OUT PW=10s D.C.1% 1 2 3 G 0.95 1 : Drain 0.4 2 : Drain CPH6412 3 : Gate P.G 50 S 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 I -- V I -- V D DS D GS 6 8 V =10V DS 7 5 6 4 5 4 3 3 2 2 1 1 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain-to-Source Voltage, V -- V IT06300 Gate-to-Source Voltage, V -- V IT06301 DS GS Rev.0 I Page 2 of 4 I www.onsemi.com V =2.0V GS 2.5V 3.0V 25C 3.5V 4.5V Ta=75C --25C 4.0V 6.0V 10V Drain Current, I -- A D 0.9 2.8 0.2 0.6 1.6 0.6 0.2 Drain Current, I -- A D