X-On Electronics has gained recognition as a prominent supplier of R5019ANJTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. R5019ANJTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R5019ANJTL ROHM

R5019ANJTL electronic component of ROHM
R5019ANJTL ROHM
R5019ANJTL MOSFETs
R5019ANJTL  Semiconductors

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See Product Specifications
Part No. R5019ANJTL
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH 500V 19A 3-Pin(2+Tab) LPTS T/R
Datasheet: R5019ANJTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
31: USD 2.9866 ea
Line Total: USD 92.58 
Availability - 97
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ: 31  Multiples: 1
Pack Size: 1
Availability Price Quantity
97
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 31
Multiples : 1
31 : USD 2.9866

   
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We are delighted to provide the R5019ANJTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R5019ANJTL and other electronic components in the MOSFETs category and beyond.

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Data Sheet 10V Drive Nch MOSFET R5019ANJ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2) High-speed switching. 2.54 0.4 0.78 3) Wide SOA. 5.08 2.7 (1) Gate (1) (2) (3) (2) Drain 4) Drive circuits can be simple. (3) Source 5) Parallel use is easy. Application Switching Packaging specifications Inner circuit Package Taping Type Code TL 1 Basic ordering unit (pieces) 1000 R5019ANJ (1) Gate (1) (2) (3) (2) Drain Absolute maximum ratings (Ta = 25 C) (3) Source 1 BODY DIODE Parameter Symbol Limits Unit Drain-source voltage V 500 V DSS Gate-source voltage V 30 V GSS *3 Continuous I 19 A D Drain current *1 Pulsed I A 76 DP *3 Source current Continuous I 19 A S (Body Diode) Pulsed *1 I A SP 76 Avalanche current I *2 9.5 A AS *2 Avalanche energy E 24.3 mJ AS *4 Power dissipation P 100 W D Channel temperature T 150 C ch Range of storage temperature T 55 to 150 C stg *1 Pw10s, Duty cycle1% *2 L 500H, V =50V, R =25, T =25C DD G ch *3 Limited only by maximum temperature allowed. *4 T =25C C Thermal resistance Parameter Symbol Limits Unit Channel to Case R 1.25 C / W th (ch-c) www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/5 13.1 3.0 9.0 1.0 1.2Data Sheet R5019ANJ Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 100 nA V = 30V, V =0V GSS GS DS Drain-source breakdown voltage V 500 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I - - 100 AV =500V, V =0V DSS DS GS Gate threshold voltage V 2.5 - 4.5 V V =10V, I =1mA GS (th) DS D Static drain-source on-state * R I =9.5A, V =10V - 0.18 0.24 DS (on) D GS resistance * Forward transfer admittance l Y l 6.5 - - S V =10V, I =9.5A fs DS D Input capacitance C - 2050 - pF V =25V iss DS Output capacitance C - 1200 - pF V =0V oss GS Reverse transfer capacitance C - 50 - pF f=1MHz rss Turn-on delay time t - 40 - ns V 250V, I =9.5A d(on) * DD D Rise time t - 115 - ns V =10V r * GS Turn-off delay time t - 165 - ns R =26.3 d(off) L * Fall time t - 100 - ns R =10 f * G Total gate charge Q - 55 - nC V 250V g * DD Gate-source charge Q - 11 - nC I =19A * gs D Gate-drain charge Q - 24 - nC V =10V gd GS * *Pulsed Body diode characteristics (Source-Drain) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.5 V I =19A, V =0V SD S GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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