X-On Electronics has gained recognition as a prominent supplier of R6002END3TL1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. R6002END3TL1 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R6002END3TL1 ROHM

R6002END3TL1 electronic component of ROHM
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See Product Specifications
Part No.R6002END3TL1
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 600V 2A TO-252 (DPAK)
Datasheet: R6002END3TL1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8921 ea
Line Total: USD 0.89 
Availability - 975
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
975
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8921
10 : USD 0.8008
100 : USD 0.5698
500 : USD 0.4972
1000 : USD 0.4829
2500 : USD 0.4554
5000 : USD 0.4367

2425
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 135
Multiples : 1
135 : USD 0.7805
500 : USD 0.6942
1000 : USD 0.5798

1448
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 40
Multiples : 1
40 : USD 1.0237
50 : USD 0.9003
100 : USD 0.72
200 : USD 0.6873
500 : USD 0.5947
1000 : USD 0.5623

1683
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 141
Multiples : 1
141 : USD 0.7805
500 : USD 0.6942
1000 : USD 0.5798

2425
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 141
Multiples : 1
141 : USD 0.7557
250 : USD 0.7254
500 : USD 0.6993
1000 : USD 0.6764
2500 : USD 0.6564

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif
 
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We are delighted to provide the R6002END3TL1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R6002END3TL1 and other electronic components in the MOSFETs category and beyond.

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R6002END3 Datasheet Nch 600V 2A Power MOSFET llOutline TO-252 V 600V DSS R (Max.) 3.4 DS(on) I 1.7A D P 26W D llFeatures llInner circuit 1) Low on-resistance 2) Fast switching 4) Drive circuits can be simple 5) Parallel use is easy 6) Pb-free plating RoHS compliant llApplication llPackaging specifications Switching Power Supply Packing Embossed Tape Packing code TL1 Marking R6002E Basic ordering unit (pcs) 2500 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 Continuous drain current (T = 25C) I 1.7 A c D *2 I Pulsed drain current 4 A DP static 20 V Gate - Source voltage V GSS AC(f>1Hz) 30 V *3 Avalanche current, single pulse I 0.3 A AS *3 E Avalanche energy, single pulse 6 mJ AS Power dissipation (T = 25C) P 26 W c D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/12 20170929 - Rev.001 R6002END3 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 Thermal resistance, junction - case R - - 4.9 /W thJC R Thermal resistance, junction - ambient - - 147 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - - 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 2 - 4 V GS(th) DS D V = 10V, I = 0.5A GS D Static drain - source *5 R T = 25C - 2.8 3.4 DS(on) j on - state resistance T = 125C - 6 - j Gate resistance R f = 1MHz, open drain - 15 - G www.rohm.com 2/12 20170929 - Rev.001 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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