X-On Electronics has gained recognition as a prominent supplier of IXZH10N50L2A MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXZH10N50L2A MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXZH10N50L2A IXYS

IXZH10N50L2A electronic component of IXYS
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See Product Specifications
Part No.IXZH10N50L2A
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET IXZH10N50L2A 10A 500V TO-247 w/Substrate Linear Left Gate
Datasheet: IXZH10N50L2A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 24.9249
10 : USD 22.6655
25 : USD 20.9638
50 : USD 19.2764
100 : USD 18.8045
250 : USD 17.797
500 : USD 16.809
1000 : USD 15.782
2500 : USD 15.548
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IXZH10N50L2A from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXZH10N50L2A and other electronic components in the MOSFETs category and beyond.

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A = G S D B = D S G IXZH10N50LA/B RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET V = 500 V DSS Low Capacitance Z-MOS MOSFET Process TM I = 10 A D25 Optimized for Linear Operation in Common Source Mode 150V (operating) Symbol Test Conditions Maximum Ratings T = 25C to 150C J V 500 V DSS T = 25C to 150C R = 1 M J GS 500 V V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C c I 10 A D25 T = 25C, pulse width limited by T c JM I 60 A DM T = 25C c I 16 A AR T = 25C c TBD mJ E AR I I , di/dt 100A/s, V V , S DM DD DSS 5 V/ns T 150C, R = 0.2 j G dv/dt I = 0 S >200 V/ns (1) P 250 W DC T = 25C, Derate 6.0W/C above 25C c P 180 W DHS T = 25C c P 3 W DAMB 0.60 C/W R thJC R 0.85 C/W thJHS min. typ. max. V = 0 V, I = 4 ma GS D 500 V V DSS Features V = V , I = 250 V DS GS D 3.5 4.95 6.5 V GS(th) TM IXYS RF Low Capacitance Z-MOS V = 20 V , V = 0 GS DC DS I 100 nA GSS Process Very low insertion inductance (<2nH) V = 0.8V T = 25C DS DSS J I 50 A DSS V =0 T =125C GS J No beryllium oxide (BeO) or other 1 mA hazardous materials V = 20 V, I = 0.5I GS D D25 1.0 R DS(on) Advantages Pulse test, t 300S, duty cycle d 2% TM High Performance RF Z-MOS V = 50 V, I = 0.5I , pulse test DS D D25 g 3.8 S fs Common Source RF Package A = Gate Source Drain T -55 +175 C J B = Drain Source Gate T +175 C JM T -55 + 175 C stg 1.6mm(0.063 in) from case for 10 s T 300 C L Weight 4 g IXZH10N50LA/B RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) J min. typ. max. C 598 pF iss V = 0 V, V = 0.8 V , GS DS DSS(MAX) C 78 pF oss f = 1 MHz C 8 pF rss T 4 ns d(on) V = 15 V, V = 0.8 V GS DS DSS T 3 ns on I = 0.5 I D DM R = 1 (External) 4 ns T G d(off) T 5 ns off VHF COMMUNICATIONS min. typ. max. Gps VDD= 50V, Pout=200W, f=175MHz 16 db 13 Drain Efficiency VDD= 50V, Pout=200W, f=175MHz 50 60 % Load Mismatch VDD= 150V, Pout=300W, f=175MHz TBD 3T MRI min. typ. max. Gps(1) VDD=150V, P =475W, F=128MHz 12 13 db OUT Drain Efficiency VDD= 50V, Pout=200W, f=175MHz 60 65 % Zin= 0.59-J0.90 Zout= 5.86+J9.34 (1) - As measured under pulsed conditions (5 ms, 5%) with a gated Bias in Class AB, at P1dB.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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