R6006ANX Nch 600V 6A Power MOSFET Datasheet lOutline V 600V DSS TO-220FM R (Max.) 1.2W DS(on) I 6A D P 40W (1)(2) (3) D lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (V ) guaranteed to be 30V. (3) Source GSS 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant lPackaging specifications Packing Bulk Reel size (mm) - Tape width (mm) - lApplication Type Basic ordering unit (pcs) 500 Switching Power Supply Taping code - Marking R6006ANX lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 600 V DSS *1 T = 25C I 6 A c D Continuous drain current *1 T = 100C A I 2.9 c D *2 Pulsed drain current I 24 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 2.4 mJ E AS *4 Avalanche energy, repetitive E 1.9 mJ AR *3 Avalanche current I 3 A AR P Power dissipation (T = 25C) 40 W c D T Junction temperature 150 C j Range of storage temperature T -55 to +150 C stg *5 Reverse diode dv/dt 15 V/ns dv/dt www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.B 1/13 Not Recommended for New DesignsData Sheet R6006ANX lAbsolute maximum ratings Parameter Symbol Conditions Values Unit V = 480V, I = 6A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125C j lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 3.125 C/W thJC Thermal resistance, junction - ambient R - - 70 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 6A - 700 - V (BR)DS GS D breakdown voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 mA DSS j drain current T = 125C - - 1000 j Gate - Source leakage current I V = 30V, V = 0V - - nA 100 GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 2.5 - 4.5 V GS (th) DS D V = 10V, I = 3A GS D Static drain - source *6 R T = 25C - 0.9 1.2 W j DS(on) on - state resistance T = 125C - 1.9 - j R Gate input resistance f = 1MHz, open drain - 7.6 - W G www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.B 2/13 Not Recommended for New Designs