X-On Electronics has gained recognition as a prominent supplier of R6006ANX MOSFETs across the USA, India, Europe, Australia, and various other global locations. R6006ANX MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R6006ANX ROHM

R6006ANX electronic component of ROHM
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See Product Specifications
Part No.R6006ANX
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 600 V 6A (Tc) 40W (Tc) Through Hole TO-220FM
Datasheet: R6006ANX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 1.8922 ea
Line Total: USD 94.61 
Availability - 485
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ: 50  Multiples: 1
Pack Size: 1
Availability Price Quantity
29
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 30
Multiples : 1
30 : USD 3.2661

485
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 50
Multiples : 1
50 : USD 1.8922
100 : USD 1.8279
250 : USD 1.7725
500 : USD 1.7243

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the R6006ANX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R6006ANX and other electronic components in the MOSFETs category and beyond.

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R6006ANX Nch 600V 6A Power MOSFET Datasheet lOutline V 600V DSS TO-220FM R (Max.) 1.2W DS(on) I 6A D P 40W (1)(2) (3) D lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (V ) guaranteed to be 30V. (3) Source GSS 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant lPackaging specifications Packing Bulk Reel size (mm) - Tape width (mm) - lApplication Type Basic ordering unit (pcs) 500 Switching Power Supply Taping code - Marking R6006ANX lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 600 V DSS *1 T = 25C I 6 A c D Continuous drain current *1 T = 100C A I 2.9 c D *2 Pulsed drain current I 24 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 2.4 mJ E AS *4 Avalanche energy, repetitive E 1.9 mJ AR *3 Avalanche current I 3 A AR P Power dissipation (T = 25C) 40 W c D T Junction temperature 150 C j Range of storage temperature T -55 to +150 C stg *5 Reverse diode dv/dt 15 V/ns dv/dt www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.B 1/13 Not Recommended for New DesignsData Sheet R6006ANX lAbsolute maximum ratings Parameter Symbol Conditions Values Unit V = 480V, I = 6A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125C j lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 3.125 C/W thJC Thermal resistance, junction - ambient R - - 70 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 6A - 700 - V (BR)DS GS D breakdown voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 mA DSS j drain current T = 125C - - 1000 j Gate - Source leakage current I V = 30V, V = 0V - - nA 100 GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 2.5 - 4.5 V GS (th) DS D V = 10V, I = 3A GS D Static drain - source *6 R T = 25C - 0.9 1.2 W j DS(on) on - state resistance T = 125C - 1.9 - j R Gate input resistance f = 1MHz, open drain - 7.6 - W G www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.B 2/13 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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