X-On Electronics has gained recognition as a prominent supplier of R6006JNXC7G MOSFETs across the USA, India, Europe, Australia, and various other global locations. R6006JNXC7G MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R6006JNXC7G ROHM

R6006JNXC7G electronic component of ROHM
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Part No.R6006JNXC7G
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 600 V 6A (Tc) 43W (Tc) Through Hole TO-220FM
Datasheet: R6006JNXC7G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.727 ea
Line Total: USD 1.73 
Availability - 1965
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1965
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 1.727
10 : USD 1.32
3000 : USD 1.287

931
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 59
Multiples : 1
59 : USD 1.7065

3
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 4
Multiples : 1
4 : USD 22.3851

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the R6006JNXC7G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R6006JNXC7G and other electronic components in the MOSFETs category and beyond.

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R6006JNX Datasheet Nch 600V 6A Power MOSFET llOutline TO-220FM V 600V DSS R (Max.) 0.936 DS(on) I 6A D P 43W D llFeatures llInner circuit 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating RoHS compliant llApplication llPackaging specifications Switching Packing Tube Packing code C7 G Marking R6006JNX Basic ordering unit (pcs) 2000 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 Continuous drain current (T = 25C) I 6 A c D *2 I Pulsed drain current 18 A DP V Gate - Source voltage 30 V GSS *3 I Avalanche current, single pulse 1.50 A AS *3 E Avalanche energy, single pulse 117 mJ AS Power dissipation (T = 25C) P 43 W c D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20190111 - Rev.002 2019 ROHM Co., Ltd. All rights reserved. R6006JNX Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case R - - 2.87 /W thJC R Thermal resistance, junction - ambient - - 70 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I - - 100 A DSS drain current T = 25C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS V Gate threshold voltage V = V , I = 0.8mA 5.0 6.0 7.0 V GS(th) DS GS D V = 15V, I = 3.0A GS D Static drain - source *5 R - 0.720 0.936 DS(on) on - state resistance T = 25C j Gate resistance R f = 1MHz, open drain - 3.1 - G www.rohm.com 2/11 20190111 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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