X-On Electronics has gained recognition as a prominent supplier of R6007KNJTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. R6007KNJTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R6007KNJTL ROHM

R6007KNJTL electronic component of ROHM
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See Product Specifications
Part No.R6007KNJTL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 600V 7A Si MOSFET
Datasheet: R6007KNJTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.749 ea
Line Total: USD 1.75 
Availability - 970
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
970
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 1.749
10 : USD 1.463
100 : USD 1.111
250 : USD 1.0956
500 : USD 0.9284
1000 : USD 0.8866
2000 : USD 0.8701

67
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 21
Multiples : 1
21 : USD 1.8881
50 : USD 1.778

72
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 73
Multiples : 1
73 : USD 1.7023

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Series
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the R6007KNJTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R6007KNJTL and other electronic components in the MOSFETs category and beyond.

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R6007KNJ Datasheet Nch 600V 7A Power MOSFET llOutline TO-263S V 600V DSS SC-83 R (Max.) 0.62 DS(on) LPT(S) I 7A D P 78W D llInner circuit llFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 24 Type Switching Quantity (pcs) 1000 Taping code TL Marking R6007KNJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 600 V DSS *1 Continuous drain current (T = 25C) I 7 A c D *2 I Pulsed drain current 21 A DP static 20 V V Gate - Source voltage GSS AC(f 1Hz) 30 V I Avalanche current, single pulse 1.3 A AS *3 E Avalanche energy, single pulse 133 mJ AS Power dissipation (T = 25C) P 78 W c D T Junction temperature 150 j Operating junction and storage temperature range T -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/12 20190603 - Rev.004 R6007KNJ Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 Thermal resistance, junction - case R - - 1.6 /W thJC *5 R Thermal resistance, junction - ambient - - 80 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - - 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3 - 5 V GS(th) DS D V = 10V, I = 2.4A GS D Static drain - source *6 R T = 25C - 0.57 0.62 DS(on) j on - state resistance T = 125C - 1.20 - j Gate resistance R f = 1MHz, open drain - 3.2 - G www.rohm.com 2/12 20190603 - Rev.004 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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