TM IXTP 1R4N60P V = 600 V PolarHV DSS IXTU 1R4N60P I = 1.4 A Power MOSFET D25 IXTY 1R4N60P R 9.0 DS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) V T = 25 C to 175 C 600 V DSS J V T = 25 C to 175 C R = 1 M 600 V DGR J GS V Continuous 30 V GS (TAB) G D V Transient 40 V GSM S I T = 25 C 1.4 A D25 C TO-251 (IXTU) I T = 25 C, pulse width limited by T 2.1 A DM C JM I T = 25 C 1.4 A AR C E T = 25C5mJ AR C E T = 25C75mJ AS C G dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS D T 150C, R = 20 J G S (TAB) P T = 25C50W D C T -55 ... +150 C J TO-252 (IXTY) T 150 C JM T -55 ... +150 C stg T 1.6 mm (0.062) from case for 10 s 300 C L G T Plastic body for 10 s 260 C SOLD S (TAB) Weight TO-220 4.0 g TO-252 0.35 g G = Gate D = Drain TO-251 0.4 g S = Source TAB = Drain Symbol Test Conditions Characteristic Values Features (T = 25 C, unless otherwise specified) Min. Typ. Max. J l BV V = 0 V, I = 25 A 600 V International standard packages DSS GS D l Unclamped Inductive Switching (UIS) V V = V , I = 25 A 3.0 5.5 V GS(th) DS GS D rated l Low package inductance I V = 30 V , V = 0 50 nA GSS GS DC DS - easy to drive and to protect I V = V 1 A DSS DS DSS V = 0 V T = 125C20 A GS J Advantages R V = 10 V, I = 0.5 I 9.0 DS(on) GS D D25 l Easy to mount Pulse test, t 300 s, duty cycle d 2 % l Space savings l High power density DS99253E(10/05) 2006 IXYS All rights reservedIXTP 1R4N60P IXTU 1R4N60P IXTY 1R4N60P Symbol Test Conditions Characteristic Values TO-220 (IXTP) Outline (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 0.5 I , pulse test 0.7 1.1 S fs DS D D25 C 140 pF iss C V = 0 V, V = 25 V, f = 1 MHz 17 pF oss GS DS C 2.4 pF rss t 10 ns d(on) t V = 10 V, V = 0.5 V , I =0.5 I 16 ns r GS DS DSS D D25 t R = 50 (External) 25 ns d(off) G t 16 ns Pins: 1 - Gate 2,4 - Drain f 3 - Source Q 5.2 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 1.34 nC gs GS DS DSS D D25 Q 5.2 nC gd R 2.5 C/W thJC R (TO-220) 0.25 C/W thCS R (TO-251) 1.0 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 1.4 A S GS I Repetitive 4 A SM TO-252 AA (IXTY) Outline V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 1.5 A, -di/dt =100 A/s 500 ns rr F V =100 V, V = 0 V R GS TO-251 (IXTU) Outline Dim. Millimeter Inches Dim. Millimeter Inches Min. Max. Min. Max. Min. Max. Min. Max. A 2.19 2.38 .086 .094 A 2.19 2.38 0.086 0.094 A1 0.89 1.14 0.35 .045 A1 0.89 1.14 0.035 0.045 b 0.64 0.89 .025 .035 A2 0 0.13 0 0.005 b1 0.76 1.14 .030 .045 b 0.64 0.89 0.025 0.035 b2 5.21 5.46 .205 .215 b1 0.76 1.14 0.030 0.045 c 0.46 0.58 .018 .023 b2 5.21 5.46 0.205 0.215 c1 0.46 0.58 .018 .023 c 0.46 0.58 0.018 0.023 D 5.97 6.22 .235 .245 c1 0.46 0.58 0.018 0.023 E 6.35 6.73 .250 .265 D 5.97 6.22 0.235 0.245 e 2.28 BSC .090 BSC D1 4.32 5.21 0.170 0.205 e1 4.57 BSC .180 BSC E 6.35 6.73 0.250 0.265 H 17.02 17.78 .670 .700 E1 4.32 5.21 0.170 0.205 L 8.89 9.65 .350 .380 e 2.28 BSC 0.090 BSC L1 1.91 2.28 .075 .090 e1 4.57 BSC 0.180 BSC 1. Gate L2 0.89 1.27 .035 .050 2. Drain H 9.40 10.42 0.370 0.410 3. Source L 0.51 1.02 0.020 0.040 4. Drain L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 2.54 2.92 0.100 0.115 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
