R6011END3 Datasheet Nch 600V 11A Power MOSFET llOutline TO-252 V 600V DSS R (Max.) 390m DS(on) I 11A D P 124W D llFeatures llInner circuit 1) Low on-resistance 2) Low radiation noise 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating RoHS compliant llApplication llPackaging specifications Switching Packing Embossed Tape Packing code TL1 Marking R6011E Basic ordering unit (pcs) 2500 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 Continuous drain current (T = 25C) I 11 A c D *2 I Pulsed drain current 22 A DP static 20 V Gate - Source voltage V GSS AC(f 1Hz) 30 V Avalanche current, single pulse I 1.8 A AS *3 E Avalanche energy, single pulse 210 mJ AS Power dissipation (T = 25C) P 124 W c D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2018 ROHM Co., Ltd. All rights reserved. 1/12 20180612 - Rev.001 R6011END3 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 Thermal resistance, junction - case R - - 1.0 /W thJC R Thermal resistance, junction - ambient - - 147 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - - 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 2 - 4 V GS(th) DS D V = 10V, I = 3.8A GS D Static drain - source *6 R T = 25C - 340 390 m DS(on) j on - state resistance T = 125C - 720 - j Gate resistance R f = 1MHz, open drain - 7.7 - G www.rohm.com 2/12 20180612 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.